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Cleanout fluid for removing photoresist layer residue

A technology of cleaning liquid and residue, applied in the field of cleaning liquid, can solve the problems of corrosion rate reduction, raw material cost reduction, quartz corrosion corrosion, etc., and achieve the effect of small corrosion rate, cost saving, and single source

Active Publication Date: 2014-06-04
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After continuous improvement, the corrosion rate of the solution itself to metal aluminum has been greatly reduced. However, because this type of cleaning solution uses hydroxylamine, and hydroxylamine has the problems of single source, explosion and high price, it is necessary to reduce the cost of raw materials
Although the existing fluoride cleaning solutions have been greatly improved, such as US5,972,862, US6,828,289, etc., they still cannot control the corrosion of metal and non-metal substrates well at the same time, and it is easy to cause channel characteristics after cleaning. Dimensional changes; on the other hand, because some mainstream semiconductor companies use wet cleaning equipment made of quartz, and fluorine-containing cleaning fluids corrode quartz, and the corrosion intensifies as the temperature rises, so there is a difference with the existing quartz Device incompatibility issues affect its widespread use

Method used

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  • Cleanout fluid for removing photoresist layer residue
  • Cleanout fluid for removing photoresist layer residue
  • Cleanout fluid for removing photoresist layer residue

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~23

[0016] Table 1 shows the formulations of Examples 1-23 of the present invention, and the cleaning solution of the present invention can be obtained by simply mixing the components in each example.

[0017] Embodiment 1~23 formula of the present invention of table 1

[0018]

[0019]

[0020]

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PUM

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Abstract

A rinse solution for removal of etching residues includes N,N-diethyl ethanolamine, other alcohol amine, water and chelanting agent. And the corrosion rate of the rinse solution to some metals and some non-metals is low. The rinse solution can be used to remove etching residues of the wafer. And the rinse solution can be used in micro electronic field for the cleaning of metals and semiconductor wafer.

Description

technical field [0001] The invention relates to a cleaning solution in a semiconductor manufacturing process, in particular to a cleaning solution for removing photoresist layer residues. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step is to remove most of the photoresist layer (PR) by dry as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCC11D7/3209C23G1/06G03F7/425C11D7/3218C11D11/0047H01L21/02068H01L21/31133
Inventor 刘兵彭洪修彭杏于昊
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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