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Preparation method of metallurgy-prepared polysilicon solar cell

A technology of solar cells and metallurgical methods, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency, high boron and phosphorus content, and multi-metal impurities in materials, etc., and achieve the effects of reducing recombination, improving minority carrier life, and increasing short-circuit current

Inactive Publication Date: 2011-07-20
XIAMEN UNIV
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, using conventional technology to directly use metallurgical polysilicon (UMG-Si) to prepare batteries, it was found that the photoelectric conversion efficiency of the battery is very low, because the material itself contains more metal impurities and defects, and the content of boron and phosphorus is also higher.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for preparing a metallurgical polysilicon (UMG-Si) solar cell, comprising the steps of:

[0023] (1) A group of cleaned P-type, metallurgical polysilicon wafers (UMG-Si) with a purity of 5.4N, a resistivity of 0.10Ω·cm, and a thickness of about 180μm were subjected to gettering treatment by passing a phosphorus source at 900°C for 3h , the maximum nitrogen flow rate is 1L / min, the small nitrogen flow rate is 0.5L / min, and the oxygen flow rate is 0.2L / min. Remove the gettering layer and rinse it with deionized water for 3 times, then dry it;

[0024] (2) Pass the above-mentioned treated silicon wafer into oxygen with water vapor for 2 hours at 750°C for oxidation treatment, the oxygen flow rate is 0.5L / min, remove the oxide layer and rinse with deionized water 3 times, and dry;

[0025] (3) Preparation of batteries by conventional processes, that is, diffusion junction, removal of the periphery, etching of the back, preparation of front and rear electrodes, and ...

Embodiment 2

[0031] A method for preparing a metallurgical polysilicon (UMG-Si) solar cell, comprising the steps of:

[0032] (1) A group of cleaned P-type metallurgical polysilicon wafers (UMG-Si) with a purity of 5.4N and a resistivity of 0.10Ω·cm were subjected to gettering treatment at 950°C for 2 hours with a phosphorus source, and the maximum nitrogen flow rate was 1.5L / min, the small nitrogen flow rate is 0.7L / min, the oxygen flow rate is 0.3L / min, remove the gettering layer and wash it twice with deionized water, and dry;

[0033] (2) Pass the above-mentioned treated silicon wafer into oxygen with water vapor for 1 hour at 850°C for oxidation treatment, the oxygen flow rate is 1L / min, remove the oxide layer and rinse with deionized water for 3 times, and dry;

[0034] (3) Preparation of batteries by conventional processes, that is, diffusion junction, removal of the periphery, etching of the back, preparation of front and rear electrodes, and growth of SiN x Anti-reflection film; ...

Embodiment 3

[0040] A method for preparing a metallurgical polysilicon (UMG-Si) solar cell, comprising the steps of:

[0041] (1) A group of cleaned P-type polycrystalline silicon wafers (UMG-Si) with a purity of 5.4N and a resistivity of 0.10 Ω·cm were exposed to a phosphorus source at 1000°C for 2.5 hours for gettering treatment. The maximum nitrogen flow rate was 3L / min, the small nitrogen flow rate is 0.9L / min, the oxygen flow rate is 0.3L / min, remove the gettering layer and rinse with deionized water for 3 times, and dry;

[0042] (2) Pass the above-mentioned treated silicon wafer into oxygen with water vapor for 1.5h at 900°C for oxidation treatment, the oxygen flow rate is 2L / min, remove the oxide layer and rinse with deionized water 3 times, and dry;

[0043] (3) Preparation of batteries by conventional processes, that is, diffusion junction, removal of the periphery, etching of the back, preparation of front and rear electrodes, and growth of SiN x Anti-reflection film;

[0044]...

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PUM

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Abstract

The invention discloses a preparation method of metallurgy-prepared polysilicon solar cell, relates to a solar cell, and provides a preparation method of the metallurgy-prepared polysilicon solar cell, which can adopt silicon material with lower purity (5-6N) and greatly reduce the production cost. The method comprises the steps of adding a phosphorus source to the metallurgy-prepared polysiliconchip to be treated for a phosphorus gettering treatment and removing the gettering layer; leading oxygen with water vapour into the metallurgy-prepared polysilicon chip treated with phosphorus gettering and gettering layer removing for wet-oxygen oxidation, and removing the oxidation layer; and preparing the metallurgy-prepared polysilicon chips treated with the wet-oxygen oxidation and the oxidation layer removing into the cells according to a conventional process, and annealing the prepared cell chip.

Description

technical field [0001] The invention relates to a solar cell, in particular to a method for preparing a low-cost silicon solar cell (especially a silicon chip with a relatively low substrate resistivity). Background technique [0002] Because solar photovoltaic power generation has the characteristics of mature technology, inexhaustible resources, no pollution and no noise, solar cells are considered to be the most important new energy in the 21st century. Solar cells are mainly based on the semiconductor material silicon. Because the material cost of polycrystalline silicon solar cells is lower than that of monocrystalline silicon solar cells, the efficiency is higher than that of thin film cells, and it is easy to prepare square shapes, the proportion of polycrystalline silicon solar cells is gradually increasing. [0003] At present, solar-grade silicon, the raw material of solar cells, mainly comes from scraps in the production process of monocrystalline silicon or mater...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈朝潘淼庞爱锁武智平郑兰花罗学涛
Owner XIAMEN UNIV
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