Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for treating plant seeds by plasmas and device for realizing method

A plasma and plant seed technology, which is applied in plasma, botany equipment and methods, seed and rhizome treatment, etc., can solve the problems of difficult control of vacuum plasma stability, limited use and promotion, high technical difficulty, etc., to achieve The effect of improving the stress resistance of seeds, the treatment method is simple and easy, and the operation cost is low

Inactive Publication Date: 2010-03-17
杨思泽
View PDF2 Cites 57 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common point of the above two seed treatment methods is that plasma must be generated in a vacuum environment, and vacuuming makes the device complex, technically difficult, and relatively high in cost. are difficult to control, thus limiting the use and promotion of such methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for treating plant seeds by plasmas and device for realizing method
  • Method for treating plant seeds by plasmas and device for realizing method
  • Method for treating plant seeds by plasmas and device for realizing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: on the influence of cucumber seed germination potential and germination rate and germination index and vigor index

[0037] It can be seen from Table 2 that plasma treatment with different parameters can significantly promote the germination of cucumber seeds, and the germination potential of all treated seeds is higher than that of CK. At the optimum frequency, in the given voltage range, as the voltage increases, the germination potential gradually increases, which is 21.18%-38.24% higher than that of CK. The germination potential of 8200V treatment drops slightly, but it is still 18.83% higher than that of CK. %. Comparing the processing results of 2 and 4, from the perspective of processing time, the processing effect of 60 seconds is better.

[0038] Except for the treatment of 20kHz, the germination rate of cucumber seeds in the other treatments all increased, which was 1.82%-8.82% higher than that of CK. The reason is that the 20kHz discharge plas...

Embodiment 2

[0042] Embodiment 2: To the influence of wheat seed germination potential and germination rate and germination index and vigor index

[0043] It can be seen from Table 3 that plasma treatment with different parameters can also significantly promote the germination of wheat seeds. Except for the case of 20kHz, the germination potential of all treated seeds is higher than that of CK. Under the frequency of 3000Hz, within the given voltage range, as the voltage increases, the germination potential gradually increases, which is 1.07%-30.84% ​​higher than that of CK. The germination potential of 8200V treatment drops slightly, but it is still 15.71% higher than that of CK. %. Comparing the processing results of 2 and 4, increasing the working frequency has little effect on the processing results. At 1500Hz and 6000V, the discharge is relatively weak, so the treatment time is adjusted to 120 seconds. From the perspective of the treatment effect, it is worse than that without treatm...

Embodiment 3

[0048] Embodiment 3: on the influence of pakchoi seed germination potential and germination rate and germination index and vigor index

[0049] It can be seen from Table 4 that plasma treatment has certain effects on the germination of pakchoi seeds, but the treatment effects of different parameters are different. Among them, 20 seconds, 3600V and 5900V treatments can promote seed germination, and the germination potential and germination rate of seeds are all improved compared with CK. The germination vigor of the two treatments was 4.56% and 5.11% higher than that of CK, and the germination rate was 5.22% and 3.91% higher than that of CK. However, with higher voltage treatment or changing frequency treatment, the two index values ​​of the seeds were lower than those of the control, the germination potential decreased by 3.26%-11.04%, and the germination rate decreased by 1.30%-10.00%. All the treatment effects of changing the frequency are not very ideal. The reason may be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for treating plant seeds by plasmas and a device for realizing the method. The plasmas of the invention are cold plasmas generated by dielectric barrier discharge under the atmospheric pressure, wherein the cold plasmas are generated in the air; the working air pressure is the atmospheric pressure; an electric source for the dielectric barrier discharge is a high-frequency and high-voltage electric source with the frequency range from 50 Hz to 20 kHz and the voltage range from 1 kV to 10 kV; and the plant seeds are treated by the plasmas for 5 to 129 sec. Thedevice for realizing the seed treating method of the invention comprises a seed treating cavity, a plasma generator for generating the plasmas in the seed treating cavity and a transmitting device capable of controlling the retention time of the seeds in the seed treating cavity. The treating operation on the plant seeds by using the atmospheric-pressure plasmas does not refer to DNA recombination, does not relate to structural genovariation of the plant seeds, and cannot cause hazards. The method only denatures the plant seeds to make the advantages become more prominent.

Description

technical field [0001] The invention relates to a method for treating plant seeds with plasma, which stimulates the growth and development of the seeds to improve plant quality and crop output value by treating the plant seeds with plasma. The present invention also relates to a device for realizing the above plasma treatment method for plant seeds. Background technique [0002] The high-yield and high-quality technology of using physical methods to treat crop seeds has been more and more used in agricultural production, and has achieved gratifying economic benefits. Use various physical factors, such as radiation, electric field, magnetic field, etc. to treat crop seeds, stimulate their growth and development, achieve the purpose of improving quality and increasing yield, reduce the use of chemical fertilizers and pesticides, and avoid environmental pollution. important areas. At present, many researches on physical seed treatment technology have problems such as complica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): A01C1/00A01G7/00H05H1/24
CPCA01C1/02
Inventor 杨思泽
Owner 杨思泽
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com