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Developing solution and method for production of finely patterned material

A technology of developing solution and development accelerator, which is applied in the field of developing solution, can solve the problem of lower dissolution rate of photoresist and achieve the effect of shortening the developing time

Inactive Publication Date: 2010-02-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These organic photoresists will detach before the photoresist dissolves at too high a pH, and the dissolution rate of the resist will slow down at a too low pH

Method used

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  • Developing solution and method for production of finely patterned material
  • Developing solution and method for production of finely patterned material
  • Developing solution and method for production of finely patterned material

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0119] (1-1) Inorganic photoresist

[0120] (1-2) Developer

[0121] (1-3) Reaction mechanism of inorganic photoresist

[0122] (1-4) Reaction of inorganic photoresist and developer

[0123] (1-5) Preparation method of photoresist master

[0124] (1-6) Method of monitoring developer

no. 2 approach

[0126] (2-1) Developer solution

[0127] (2-2) Reaction of inorganic photoresist and developer

no. 3 approach

[0129] (3-1) Developer solution

[0130] (3-2) Reaction between inorganic photoresist and developer

[0131] (1) First Embodiment

[0132] (1-1) Inorganic photoresist

[0133] First, the inorganic photoresist used in the first embodiment of the present invention will be described.

[0134] In photolithographic methods, inorganic photoresists are known to have better thermal stability compared to organic photoresists, and in addition, significantly higher gamma properties are easily obtained when using inorganic photoresists. For example, organic photoresists such as polystyrene (PS), polymethyl methacrylate (PMMA), polymethacrylic Glycidyl ester-chlorostyrene copolymer (GMC), poly(butene-1-sulfone) (PBS) and benzaldehyde novolac (novolac), etc., usually only give a gamma property of 3 or less after development . In addition, γ=l / (log δ1-log δ0) (wherein δ0 is the minimum exposure amount required to sensitize the photoresist; δ1 is the exposure amount required to fully sen...

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PUM

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Abstract

Disclosed is a developing solution comprising an aqueous alkali solution, at least one anion selected from a silicate ion, a carbonate ion, a borate ion and a phosphate ion, and at least one cation selected from an ammonium ion, an organic ammonium ion and an alkali metal ion. The aqueous alkali solution may be an aqueous solution of a tetra-alkyl ammonium hydroxide.

Description

field of invention [0001] The present invention relates to a developing solution and a method for producing a microfabricated material using the developing solution. More particularly, the present invention relates to a developer for developing a thermosensitive inorganic resist (resisit), which utilizes an oxidation / reduction reaction or phase transfer of a transition metal oxide. Background of the invention [0002] Methods utilizing inorganic photoresists have been proposed as a means to achieve high-resolution, angularly controllable shape patterns. Reported methods include the use of electron beams or ion beams (see, e.g., Japanese Patent Laid-Open Nos. (JP-A) No. 6-132188 and JP-A No. 8-69960), the use of extreme ultraviolet light (see, e.g., JP -A No. 2004-172272), using a laser (see, eg: Japanese Journal of Applied Physics, 44, 3574-3577, 2005) etc. as an activation energy source for drawing shape patterns. [0003] Among methods using laser light as drawing energy...

Claims

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Application Information

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IPC IPC(8): G03F7/32G11B7/26
Inventor 齐藤则之安达则夫
Owner SONY CORP
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