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Large area MEMS membrane type gas enricher

A large-area, enricher technology, applied to semiconductor/solid-state device components, instruments, scientific instruments, etc., can solve the problems of mechanical strength that is difficult to support suspended structures, small enrichment area, and unfavorable large airflow.

Inactive Publication Date: 2010-01-13
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The disadvantage of this flat plate concentrator is that the enrichment area is small
Due to the use of a very thin SiN diaphragm, its mechanical strength is difficult to support a larger-sized suspended structure, and the cavity size of the Sandia concentrator is only 2.2×2.2mm
Because the adsorption area is very limited, which affects the improvement of the enrichment rate
In addition, the micropores on the glass cover are not conducive to the passage of large airflow, and the flow rate is usually less than 5 sccm, which limits the improvement of the adsorption rate to a certain extent.

Method used

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  • Large area MEMS membrane type gas enricher
  • Large area MEMS membrane type gas enricher
  • Large area MEMS membrane type gas enricher

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1 - Straight

[0026] figure 2 It is a schematic diagram of the structure of a large-area enrichment device in which the enrichment units are arranged in a straight line. It contains a total of 4 enrichment units. Of course, it can also be composed of more enrichment units. The main structure includes a silicon frame 10 , a SiN diaphragm (a suspended diaphragm 11 ), a heating element 12 , a silicon frame 13 , a selective adsorption film 14 , and a glass top cover 15 . Typically, about 500 μm thick silicon is used as the substrate. A SiN film layer (suspended diaphragm 11 ) of about 1 μm is prepared on the front surface of the substrate by plasma enhanced chemical vapor deposition (PECVD), and a silicon dioxide film can also be used. Then, four serpentine heating elements 12 were manufactured according to the design of the linear combination. The heating material is a platinum thin film with a film thickness of about 200nm and a size of 1.8mm×1.8mm. It is dep...

Embodiment 2

[0028] Example 2 - Parallel type

[0029] image 3 It is a schematic diagram of the structure of a large-area concentrator composed of 16 enrichment units, which is equivalent to arranging 4 columns of linear concentrators together, with 4 enrichment units in each column. In order to make the air flow in each column uniform, gas distribution channels 17 are respectively designed at the air inlet 8 and the air outlet 9, so that the gas path is divided into two, and then divided into four, and the distance of each gas path is guaranteed to be equal, so that The 16 enrichment units can be evenly contacted with the gas, ensuring that each enrichment unit has the same adsorption function. The side-by-side combination method has a larger adsorption area than the linear type, and its enrichment rate for DMMP can reach 240.

Embodiment 3

[0030] Example 3 - Coil Type 1

[0031] Figure 4 It is a schematic diagram of the structure of a large-area concentrator with 16 enrichment units arranged in a coiled pattern. It is characterized in that a glass grid 16 is etched on the glass top cover 15, so that when the glass top cover 15 and the silicon substrate are bonded together , These glass grids 16 form a fixed gas path inside the enricher, so that the gas passes through the 16 enricher units sequentially along the winding gas path. The width of the glass grid 16 is about 0.5mm, the distance between the grids and the edge of the grid and the top cover is 3mm, the adsorption unit is in the middle position between the two grids, and the distance between the two adsorption units in the same row The distance is 0.5mm.

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Abstract

The invention discloses a large area MEMS membrane type gas enricher, comprising a silicon substrate, a top cap and an enriching region arranged between the silicon substrate and the top cap; wherein the top cap is provided with an air inlet and an air outlet, the enriching region is composed of a plurality of enriching units, each enriching unit is provided with a hanging membrane which are provided with a film heater and an adsorption film, and a silicon frame which are arranged all around the hanging membrane. The invention not only has the advantages of small heat capacity and fast heating rate but also effectively increases absorption area and absorption gross and improves enriching rate by combining a plurality of enriching units.

Description

technical field [0001] The invention relates to the technical field of gas concentrators, in particular to a large-area MEMS diaphragm concentrator. Background technique [0002] The detection of extremely low-concentration atmospheres has always been a huge challenge for various analytical instruments. In gas chromatography (GC), mass spectrometry (MS), ion mobility spectrometry (IMS), surface acoustic wave sensor (SAW), flame ion detector ( FID) and other analysis systems with an enricher at the front end can increase the detection capability of the system by 1-3 orders of magnitude, and the enricher has become an indispensable and important component of a high-sensitivity gas test system. [0003] The enricher is mainly composed of adsorption materials and heaters. Its working principle is to firstly make the gas to be tested pass through the adsorption material, and after enriching for a period of time, heat the adsorption material to desorb the adsorbed gas in a short t...

Claims

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Application Information

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IPC IPC(8): G01N30/08B81B7/02
Inventor 杜晓松夏乐洋蒋亚东胡佳
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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