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Millimeter-wave single-chip integrated low-noise amplifier (LNA)

A low-noise amplifier, monolithic integrated technology, applied in the field of electronics, can solve the problems of difficult input impedance matching, small size consistency, narrow operating bandwidth, etc.

Inactive Publication Date: 2010-01-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Application Information

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Problems solved by technology

[0007] The present invention provides a millimeter-wave band monolithic low-noise amplifier based on PHMET technology to overcome the contradiction between poor consistency and large volume in the hybrid low-noise amplifier circuit and the noise figure, bandwidth, and input matching in the monolithic integrated low-noise amplifier. The shortcomings of narrow bandwidth and difficult input impedance matching, while ensuring low noise, improve the standing wave performance of the single-chip low-noise amplifier to achieve the purpose of small size and good consistency

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  • Millimeter-wave single-chip integrated low-noise amplifier (LNA)

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Embodiment Construction

[0050] The Ka-band broadband low-noise amplifier chip is designed by OMMIC's 0.15μm PHEMT process.

[0051] Five-stage low-noise amplifier chip circuit topology design:

[0052] According to the gain and noise figure requirements of the low-noise amplifier chip, select a balanced five-stage common-source amplification structure, such as Figure 4 shown. The input and output impedances are 50 ohms, and a Lange bridge is added to the input and output sections. The input and output terminals of each stage in the amplifier chain have DC blocking coupling capacitors. The noise performance of the first and second amplifiers plays a decisive role in the noise performance of the entire amplifier, but at the same time it must provide sufficient gains G1 and G2 to suppress the noise generated by the subsequent stages, so the first and second amplifiers must be considered comprehensively Noise matching and gain matching. According to the previous analysis, the best noise matching point...

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Abstract

The invention relates to a millimeter-wave single-chip integrated low-noise amplifier (LNA) which belongs to the electronic technical field and comprises two Runge bridges and a two-way (balanced-type) five-stage amplification structure connected between the Runge bridges in a circuit structure. The whole amplifier circuit is integrated on a single gallium arsenide chip or a silicon chip. The invention adopts a PHMET process, has excellent noise performance and adopts input conjugation match and noise match to simultaneously realize high gain and low noise. In a bias aspect, the invention removes a one-fourth wavelength line used in a traditional LNA for direct current bias to greatly reduce the chip area, adopts a self-supply bias mode to reduce the numbers of power supplies and devices, and adopts the two Runge bridges to form a balanced-type structure so as to improve the stability, the maximum output power, the standing wave performance and the noise performance of the LNA. The invention can be applied in a radar system, a communication system, and the like.

Description

technical field [0001] The invention belongs to the field of electronic technology and relates to a millimeter-wave single-chip integrated low-noise amplifier (LNA), which can be directly applied to systems such as radar and communication. Background technique [0002] Nowadays, most millimeter-wave receivers are heterodyne circuits. In order to detect small signals, a low-noise amplifier is generally used in the front stage to amplify the received signal to overcome the noise in the subsequent stage. The low-noise amplifier is one of the key units of the millimeter-wave receiving front-end system. It is located in the first stage of the receiver and is directly connected to the antenna signal. Because it is located in the first stage of the receiver, its noise characteristics will greatly affect the noise characteristics of the whole system. At the same time, the signal from the antenna is generally weak, and the sensitivity caused by the noise characteristics of the low n...

Claims

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Application Information

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IPC IPC(8): H03F3/60
Inventor 杨自强杨涛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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