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High anti-static Schottky diode

A Schottky diode, electrostatic technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of weak metal barrier withstand surge, Schottky diode failure, and metal barrier electrostatic damage.

Inactive Publication Date: 2010-01-06
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While Schottky diodes are widely used, they also encounter new problems: when performing high-voltage insulation tests on switching power supplies, about 1% of Schottky diodes fail
Due to the weak ability of metal barriers to withstand surges, metal barriers are most susceptible to electrostatic damage, resulting in the above reasons

Method used

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Embodiment

[0014] Example: such as figure 2 As shown, the high antistatic Schottky diode of the present invention is based on an N-type semiconductor as a substrate 4; an N-epitaxial layer 3, a metal barrier layer 2 and an anode metal layer 1 are formed using phosphorus as a dopant; Silicon dioxide (SiO 2 ) 6 is used to eliminate the electric field in the edge region and improve the withstand voltage of the tube; an N+ cathode layer and a cathode metal layer 5 for reducing the contact resistance of the cathode are formed under the substrate 4 . Among them, the anode metal layer 1 is a barrier layer made of materials such as molybdenum or aluminum; a P-type protective ring 7 is also provided on the N-epitaxial layer 3 to form a protective diode; The boron atoms are diffused in one direction to form a P-type boron diffusion region 8, and form six evenly distributed P-type lattice diodes with the N-epitaxial layer 3, which are connected in parallel with the protection diodes formed by the ...

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Abstract

The invention relates to a high anti-static Schottky diode, and the internal structure thereof comprises an N-epitaxial layer, a substrate, silica used for eliminating electric field of marginal area and P-type protection ring; in a metal potential barrier region, the original Schottky diode is spread with a plurality of P-type dot matrix diodes towards the direction of the N-epitaxial layer, and the P-type dot matrix diodes are in parallel connection with the protection diodes formed by the P-type protection ring; in the Schottky diode improved by the invention, instant surging current generated by static can quickly flow out of the P-type dot matrix diodes, thus greatly improving the anti-static performance of the diodes and prolonging the service life.

Description

technical field [0001] The invention belongs to the field of electronic components, in particular to a high antistatic Schottky diode. technical background [0002] With the popularization of information products, communication products and household appliances, switching power supply has been widely used, and Schottky diode, the core component of switching power supply, has developed rapidly. While Schottky diodes are widely used, they also encounter new problems: about 1% of Schottky diodes fail when performing high-voltage insulation tests on switching power supplies. The above reasons are mainly due to the poor antistatic ability of Schottky diodes. At present, the antistatic level of Schottky diodes on the market is around 2kV (IEC-61000-4-2 standard, direct contact). At present, due to the failure of the Schottky diode caused by the high-voltage insulation test of the switching power supply and the repair of the switching power supply after the failure, the global an...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L23/60
Inventor 何永成
Owner CHANGZHOUSR SEA ELECTRONICS
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