Light-emitting diode chip and preparation method thereof

Abstract

The invention relates to a light-emitting diode chip, which comprises a heat sink substrate, a metal joint layer and a bare core, wherein the bare core comprises an n-type semiconductor layer, a luminous layer, a p-type semiconductor layer, a reflecting layer and an electrode layer; and the light-emitting diode chip is characterized in that: the metal joint layer comprises a first joint layer and a second joint layer which are mutually separated and can be connected with an external power line; the first joint layer is jointed with the reflecting layer; the second joint layer is jointed with the electrode layer; at least the contact part of the upper surface of the heat sink substrate and the metal joint layer is set as an insulation part; and the bare core is connected with the external power line through the first joint layer and the second joint layer to form a current passage with thermal-electric separation. The light-emitting diode chip adopts a thermal-electric separating structure, so that the heat sink substrate is specially used for radiating, and a conduction part is completed by a metal joint layer composition, so the radiating effect is obviously improved, and simultaneously the luminous efficiency is correspondingly improved. The invention also relates to a preparation method for the light-emitting diode chip.

Description

technical field [0001] The invention relates to a light emitting diode (LED) chip and a preparation method thereof. Background technique [0002] The traditional light-emitting diode chip is placed on a bottom plate (substrate) with the electrode metal facing upward, so the light-emitting layer of the light-emitting diode chip is below the electrode metal layer, and part of the emitted light is absorbed by the electrode metal layer, thereby affecting the light emission. The light extraction efficiency of the diode. With the continuous development of semiconductor chip (chip) technology, the traditional technology can no longer meet the increasing requirements for the luminous efficiency and brightness of light emitting diodes. In order to improve the light extraction efficiency of light emitting diodes, flip chip (flip chip) technology is widely used in the preparation of light emitting diodes. Since the light-emitting diodes prepared by the flip-chip process have the char...

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Problems solved by technology

For this reason, the applicant has applied for a patent on a light-emitting diode and its preparation method. The light-emitting diode in this patent has adopted a single-electrode chip with a vertical structure and removed the substrate of the bare core on the chip. It improves the luminous efficiency and eliminates the influence of the substrate on the chip, but because the heat sink substrate is made of conductive materials, and the two electrode layers connected to the external power line are respectively arranged on the back of the heat sink substrate and the n-type On the semiconductor layer, the heat sink substrate acts as a heat sink substrate and conducts electricity as an electrode at the same time, that is, "thermoelectricity is not separated". This structure is not conducive to the heat dissipation of the chip because the substrate conducts heat and conducts current at the same time.

There is also a light-emitting diode chip structure disclosed in Japanese Patent JP2003-142736. Although it arranges two separated auxiliary electrodes connected to the bare core on the heat sink substrate, its substrate 12 acts as a heat dissipation substrate while It should also be used as an electrode to conduct electricity, so there are also problems such as thermoelectricity not being separated, which is not conducive to chip heat dissipation.

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