Organic elctroluminescent device and preparation method thereof
An electroluminescence display and electroluminescence technology, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc. Effect
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Embodiment 1
[0034] 1) Depositing a transparent ITO conductive layer on a transparent glass substrate using a sol-gel method or a pulsed laser deposition method to prepare an ITO conductive glass substrate;
[0035] Then adopt magnetron sputtering method to prepare the cadmium sulfide buffer layer that thickness is 0.1nm on the clean ITO conductive glass substrate that has been processed through ozone plasma;
[0036] 2) Evaporate N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'- on the buffer layer by vacuum evaporation Diamine (NPB), prepare hole transport layer;
[0037] 3) On the hole transport layer, 8-hydroxyquinoline aluminum (Alq 3 ), preparing electron transport layer and light-emitting layer;
[0038] 4) On the electron transport layer, the cathode materials LiF and Al are evaporated by vacuum evaporation to prepare a LiF / Al mixed cathode;
[0039] 5) In an inert gas atmosphere, the device is packaged as a whole by using a packaging substrate, and the preparation of the o...
Embodiment 2
[0041] Compared with embodiment 1, its difference is the difference of preparing buffer layer, and other steps are identical, and the preparation of its buffer layer is:
[0042] A zinc sulfide buffer layer with a thickness of 1 nm was prepared by magnetron sputtering on a clean ITO conductive glass substrate treated with ozone plasma.
Embodiment 3
[0044] Compared with embodiment 1, its difference is the difference of preparing buffer layer, and other steps are identical, and the preparation of its buffer layer is:
[0045] A zinc selenide buffer layer with a thickness of 3 nm was prepared by magnetron sputtering on a clean ITO conductive glass substrate treated with ozone plasma.
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