Power module by directly bonding power terminal

Abstract

The invention discloses a power module by directly bonding a power terminal, comprising a chip, an insulating substrate, a radiating rib, the power terminal and a shell, wherein the power terminal is directly fixed on the shell. The fixing mode of the power terminal can optimize the design shape of the terminal, reduce stray inductance, and improve the reliability and service life by applying thepower terminal module.

Description

technical field [0001] The invention belongs to the field of power electronics and relates to packaging of power modules, in particular to a power module with direct bonding of power terminals. Background technique [0002] Power modules include insulated gate bipolar transistor (IGBT) modules, diode modules, MOSFET modules, intelligent power (IPM) modules, etc. There are some inherent shortcomings in the traditional packaging of these power modules. figure 2 Be explained. figure 2 Shown is a conventional IGBT module package. A traditional IGBT module includes an IGBT chip 7, a diode chip 3, an insulating substrate (DBC) 5, a heat sink 6, power terminals 2, aluminum wires 4, a plastic case 1, and silicone gel 8 . Depend on figure 2 It can be seen that the traditional power terminal 2 is soldered to the conductive copper layer on the surface of the insulating substrate (DBC) 5 by reflow soldering. Because the coefficient of thermal expansion of the solder used is quite ...

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the problem of large parasitic inductance caused by power terminals inside the existing power module

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