Test structure of breakdown voltage, analytic procedure applying same and wafer

Abstract

The invention discloses a test structure of breakdown voltage, an analytic procedure applying the same and a wafer. The test structure comprises at two comb test circuits with metal connection wires, wherein the distances among metal wires in each comb test circuit are equal, the distances among metal wires of the comb test circuits are not equal, and the distances of the metal wires are the distance between any two adjacent metal wires in the comb test circuits. The analytic procedure comprises the following steps: measuring breakdown voltage of each comb test circuit of a test structure of each chip formed on the wafer; obtaining the change trend of breakdown voltage of each comb test circuit of the each chip along with the distance change among the metal wires; and analyzing the reason of uneven distribution of breakdown voltage of the wafer according to the change trend of breakdown voltage of each comb test circuit of each chip along with the distance change among the metal wires. The invention can quickly analyze the reason of uneven distribution of breakdown voltage of interlamination media of the wafer.

Description

technical field [0001] The invention relates to the reliability test of the semiconductor process, in particular to a breakdown voltage test structure, an analysis method using the test structure and a wafer. Background technique [0002] With the increase of circuit integration, a single metal layer is no longer able to complete the wiring of integrated circuits (IC, Integrated Circuit), but it is necessary to use a multi-layer metal interconnection structure (Multi-layered structure), and, between metal layers requires Separate them with dielectric materials with good insulating properties to prevent short circuits. [0003] figure 1 It is a cross-sectional view of a multilayer copper metal interconnection structure, the lower copper metal lines 10, 11 are isolated by the first dielectric layer 12; the etching barrier layer 14 and the second dielectric layer on the copper metal lines 10, 11 16 are collectively referred to as inter-and intra-layer dielectric (ILD, inter-a...

AI Technical Summary

Problems solved by technology

However, there is currently no method that can analyze the uneven breakdown voltage distribution of the interlayer dielectric caused by the above-mentioned reasons.

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