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Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier

A technology of heterojunction field effect and integrated power, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as incompatibility and increase process steps, and achieve the effect of reducing device volume and weight

Active Publication Date: 2009-10-21
THE HONG KONG UNIV OF SCI & TECH
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Problems solved by technology

However, this structure requires additional process steps and is not compatible with conventional HEMT devices using Ni / Au gate metal

Method used

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  • Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier
  • Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier
  • Integrated hemt and a combination, method as well as a system of a horizontal field effect rectifier

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Embodiment Construction

[0052] Next, this application will use some preferred embodiments to describe the innovation of the present invention (the examples are only for illustration and not to limit the present invention). This application involves many innovations, but the following detailed description should not be construed as limiting the claims.

[0053] For the sake of simplicity and clarity of illustration, the drawings only illustrate the general structure, and some well-known details and explanations are omitted to avoid unnecessary vague expressions. In addition, the basic units in the drawings are not necessarily to scale, and some partial regions or elements may be enlarged to help readers better understand the present invention.

[0054] Terms such as "first", "second", "third", "fourth" and other terms involved in the description and claims of this application are only used to distinguish similar content, and are not necessarily used to describe a specific order or chronologically. I...

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Abstract

The invention provides integrated HEMT and a combination, a method as well as a system of a horizontal field effect rectifier. The invention discloses an integrated highly efficient field effect rectifier and a device of HEMT based on GaN or other similar semi-conductor material, a method for manufacturing the integrated device and a system comprising the integrated device. The horizontal field effect rectifier is provided with an anode which comprises short-circuit ohmic contact and Schottky contact, a cathode which comprises an ohmic contact; while HEMT preference is provided with a grid comprising Schottky contact. Two zones provided with fluorine ion are respectively formed right beneath the Schottky contact of the rectifier and HEMT, in order to pinch off a (electron gas) groove of hetero-junction interface between epilayers of two structures.

Description

[0001] This application claims priority to US Provisional Patent Application No. 61 / 064,899, filed April 2, 2008, the contents of which are incorporated herein by reference. technical field [0002] The invention relates to a GaN power integrated circuit, in particular to a GaN power integrated circuit with a monolithic integrated AlGaN / GaN HEMT and a lateral power field effect rectifier and a manufacturing method thereof. Background technique [0003] Power semiconductor devices include three-terminal transistor switching devices and two-terminal power rectifiers. These rectifiers and transistors are essential components of switching power supplies, power drive circuits, etc. [0004] When it comes to transistors, AlGaN / GaN high electron mobility transistors (HEMTs) are usually the best choice. III-Nitride (IIl-N) compound semiconductors such as AlGaN / GaN have the advantages of large band gap, high critical breakdown electric field, and large thermal conductivity. Therefor...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L29/43H01L21/8248
CPCH01L29/7787H01L27/0629H01L29/2003H01L27/0605H01L29/872
Inventor 陈敬陈万军周春华
Owner THE HONG KONG UNIV OF SCI & TECH
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