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Carborundum

A technology of silicon carbide and silica, applied in the fields of inorganic chemistry, silicon compounds, chemical instruments and methods, etc.

Inactive Publication Date: 2009-10-14
于旭宏
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention provides the special new application and production method of this novel silicon carbide

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Get silicon carbide containing 12ppm of the fifth element, particle size < / = 5 microns, place in 0.1 mol / L sodium hydroxide solution, heat to 50°C, keep warm for 96 hours, centrifugally filter the sodium hydroxide solution, use The deionized water was repeatedly washed 5 to 20 times, and dried, and the obtained silicon carbide contained 0.9 ppm of the fifth element after determination.

Embodiment 2

[0054] Take silicon carbide containing 5ppm of the fifth element, with a particle size of 300 mesh, put it in 0.1 mol / L potassium hydroxide solution, heat it to 120°C in a closed container, keep it warm for 48 hours, take it out after cooling, and centrifuge to remove the hydroxide Potassium solution, washed repeatedly with deionized water 5 to 20 times, finally add 1 times the amount of deionized water, boil until the water is boiled, and the obtained silicon carbide contains 0.8ppm of the fifth element.

Embodiment 3

[0056] Take silicon carbide powder (200 mesh) containing 5ppm of the fifth element, mix with 10 times the amount of calcium fluoride and sodium fluoride and heat it to a molten liquid state, stir well to disperse the non-melting silicon carbide powder in the molten salt , and kept for 18 hours, cooled, broken, and ammonium salt solution was added to dissolve and remove calcium fluoride and sodium fluoride, and washed and dried to obtain silicon carbide. The content of the fifth element was measured to be 0.3ppm.

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PUM

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Abstract

The invention relates to carborundum. The content of the impurity of a fifth element of the carborundum is within a specific range, and a carbothermic reduction method, a production method by a purification method and a purpose of being industrially used as a reducer of the carborundum are provided.

Description

Background of the invention [0001] The invention relates to a novel silicon carbide, and provides a production method and application of the silicon carbide. [0002] At present, silicon carbide in industry is mainly divided into ordinary silicon carbide and semiconductor grade silicon carbide (silicon carbide single crystal). [0003] There are generally two methods for industrial production of ordinary silicon carbide: carbon thermal reduction of silica or silica powder, mixing silica / powder (i.e. silicon dioxide) and carbonaceous materials into a reaction material according to an appropriate ratio, and placing it in the heat preservation In the container, use resistance or other means to heat, so that the reaction material undergoes oxidation-reduction reaction at about 1400-2600 ° C to form silicon carbide. This method can be used to produce black silicon carbide and green silicon carbide; the direct reaction method of silicon and carbon, the simple substance Silicon (suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C01B33/027
Inventor (请求不公开姓名)
Owner 于旭宏
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