Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing of moisture sensitive surfaces and compositions therefor

A technology for blending, polishing surfaces, applied in the field of microemulsions, which can solve problems such as loss of efficiency in step height reduction, loss of ability to remove surface roughness, etc.

Inactive Publication Date: 2009-09-16
ST LAWRENCE NANOTECH
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A direct result of this direct contact can be loss of step height drop efficiency or loss of ability to remove surface roughness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing of moisture sensitive surfaces and compositions therefor
  • Chemical mechanical polishing of moisture sensitive surfaces and compositions therefor
  • Chemical mechanical polishing of moisture sensitive surfaces and compositions therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Embodiment 1 (L2 microemulsion)

[0061] A solution of sodium dodecyl sulfate (SDS) was prepared by dissolving 10.0 grams of SDS in 13.0 grams of DI (deionized) water. To the above solution, 77.0 grams of pentanol was added. The solution was then filtered using 0.4 μm filter paper. Samples of potassium diphosphate (KDP) crystals were mounted on homemade supports and then polished on polyurethane pads (IC1000, Rohm & Haas) with a bench toppolisher (Struer Labopol-5). Downforce is set at about 3-5psi. The table speed was set at 50-150 rpm. Adjust the slurry flow rate to approximately 60 mL / min. After polishing for 3 minutes, the samples were then cleaned with amyl alcohol and air dried. The material removal rate was then calculated based on the weight loss after polishing. The table below lists the removal rates under various conditions.

[0062] Table 1. Material removal rate (MRR) of KDP crystals

[0063] Downforce (PSI) Table speed (rpm) MRR(nm / ...

Embodiment 2

[0065] To 950 g of the solution described in Example 1 (10% water, 13% SDS and 77% pentanol, all % by weight based on the total weight of the solution) were added 50 g of fumed silica (Degussa 200). The resulting slurry was then used in polishing similar to that described in Example 1. The removal rates under various conditions are listed in Table 2.

[0066] Table 2. Material removal rates of KDP crystals

[0067] Downforce (PSI) Table speed (rpm) MRR(nm / min) 4 100 12030 5 100 15300 5 150 17900

Embodiment 3

[0069] Solutions were prepared according to the same procedure as described in Example 1, except for the drop in water (3 grams). A series of polishes were tested under one of the test conditions in Table 1 (5 psi downforce, 150 rpm table speed and 60 mL / min slurry flow rate). Material removal rate and step height changes were detected every 30 seconds for KDP samples. Table 3 lists the material removal and step height reduction over time.

[0070] Table 3. Material removal and step height reduction over polishing time for Example 3

[0071] polished

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to compositions for chemical mechanical polishing (CMP - also referred to as chemical mechanical planarization) for fabrication of an advanced optical, photonic, or microelectronic device, wherein the composition is a microemulsion.

Description

[0001] import for reference [0002] The following are hereby incorporated by reference and may be employed in the practice of this invention: Any prior applications, all documents cited therein or during their prosecution ("Application Citations"), in Application Citations All documents cited or referenced herein, all documents cited or referenced herein ("herein cited documents"), all documents cited or referenced in herein cited documents, and any manufacturer's instructions, descriptions, product specifications, hereby Product manuals for any products mentioned here or in any document incorporated herein by reference. technical field [0003] The present invention relates to compositions for chemical mechanical polishing (CMP) for processing advanced optical, photonic or microelectronic devices, wherein the compositions are microemulsions. Background technique [0004] Chemical mechanical polishing (CMP - also known as chemical mechanical planarization or chemical mech...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/461
CPCC09G1/02
Inventor 李玉卓
Owner ST LAWRENCE NANOTECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com