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Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target

A transparent conductor, zinc oxide technology, applied in the direction of oxide conductors, sputtering plating, non-metallic conductors, etc., can solve the problems of reducing the resistivity, the effect of reducing the resistivity, insufficient and other problems, and achieve good wettability Effect

Active Publication Date: 2009-07-22
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, Patent Document 3 describes that adding silver to an oxide of zinc oxide and an element having a positive trivalent valence has an effect on increasing the resistivity of a transparent conductive film, but the effect of lowering the resistivity in this method is insufficient.
[0007] In addition, Patent Document 4 discloses a method for obtaining a desired etching rate by simultaneously adding an n-type dopant and cobalt (Co) or vanadium (V) to zinc oxide to control the chemical characteristics, but the oxidation obtained by this method Since the resistivity of the zinc-based film increases with the concentration of added cobalt, etc., it is not an invention aimed at lowering the resistivity.

Method used

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  • Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target
  • Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target
  • Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] (Characteristic Confirmation Test 1)

[0059] Weigh zinc oxide and gallium oxide (Ga 2 o 3 ) each raw material powder, as shown in sample numbers 1-5 in Table 1, the atomic ratio of ZnO and Ga as its constituent elements is in the range of ZnO:Ga=99.00-92.00:1.000-8.000. That is, the atomic concentration ratio of Ga to the total amount of Ga and ZnO was varied between 1.000 and 8.000 atomic %. Specifically, the weight of each raw material to be weighed can be easily obtained by calculation from the above-mentioned atomic number ratio and molecular weight of each weighed raw material.

[0060] After mixing the weighed raw materials, use a zirconia ball with a diameter of 3 mm to finely pulverize the raw material powder with a grinder for about 1 hour, sieve it through a 60-mesh sieve, and keep it in a drying oven set at 120°C For 24 hours, the moisture in the raw material was evaporated. The dried raw materials were sieved again with a 60-mesh sieve, and thoroughly m...

Embodiment 2

[0112] (Characteristic Confirmation Test 7)

[0113] Weigh zinc oxide and aluminum oxide (Al 2 o 3 ) each raw material powder, as shown in sample numbers 101-105 in Table 2, the atomic ratio of ZnO and Al as its constituent elements is in the range of ZnO:Al=99.80-95.00:0.200-5.000. That is, the atomic concentration ratio of Al with respect to the total amount of Al and ZnO was changed within 0.200 to 5.000 atomic %. Specifically, the weight of each raw material to be weighed can be easily obtained by calculation from the above-mentioned atomic number ratio and molecular weight of each weighed raw material.

[0114] After mixing the weighed raw materials, use a zirconia ball with a diameter of 3 mm to finely pulverize the raw material powder with a grinder for about 1 hour, pass through a 60-mesh sieve, and keep in a drying oven set at 120°C For 24 hours, the moisture in the raw material was evaporated. The dried raw materials were sieved again with a 60-mesh sieve, and th...

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Abstract

The invention provides a zinc oxide based transparent electric conductor composed mainly of zinc oxide (ZnO) and containing an element being an n-type dopant for the zinc oxide, characterized in that a metal whose parameter P indicating a wetting characteristic with zinc oxide (P=(G+Hmix) / RT, wherein G is the Gibbs free energy of the metal at temperature T; Hmix is the mixing enthalpy of zinc oxide and metal at temperature T; R is gas constant, and T is temperature) is 6 or below, the metal exhibiting a resistivity lower than that of the zinc oxide loaded with the n-type dopant, is contained in an amount of 0.05 to 2.0 atom.% based on all the metal atoms. In the development of transparent electric conductor not having raw material indium In that is expensive and feared for resource depletion, crossing the bounds of the conventional development technique according to single doping method, it is intended to indicate the preference guideline for secondary additive material effective for conversion to low resistivity and further the particular type of material and the range of appropriate concentration and to accordingly provide a transparent electric conductor with low resistivity.

Description

technical field [0001] The present invention relates to a zinc oxide-based transparent conductor mainly composed of zinc oxide, a sputtering target for forming the transparent conductor, and a method for producing the sputtering target. In addition, the term "transparent conductor" used here includes a transparent conductive film. Background technique [0002] At present, the most widely used material for transparent electrodes such as flat panel displays is indium oxide (In 2 o 3 ) ITO (Indium Tin Oxide) obtained by doping an appropriate amount of tin (Sn). The reason why ITO has become the leading role of transparent conductors is that ITO has low resistivity and high transmittance in the visible light range. The various properties required for transparent conductors are superior to those of other material systems. [0003] However, indium (In), the raw material used in ITO, is expensive, which increases the cost of finished products and the supply of materials due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/08C04B35/453C23C14/08C23C14/34H01B5/14
CPCC04B2235/3281C04B2235/3284C04B35/453C23C14/086H01B1/08C04B2235/3217C23C14/3414C04B2235/3286C04B2235/6562C04B2235/3279C04B35/645C04B2235/3291C04B2235/3272C04B2235/658C04B2235/3275C23C14/08H01B5/14
Inventor 生泽正克矢作政隆
Owner JX NIPPON MINING & METALS CORP
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