High density resistor conversion memory and memory operation method thereof

Abstract

The invention belongs to the field of integrated circuit technology and in particular relates to a resistance-conversion memory and a method of conducting memory operations to the memory. The invention adopts binary or over-binary complex metal oxides (such as CuxOs with x being more than 1 and less than or equal to 2, WOxs with x being more than 2 and less than or equal to 3, titanium oxides, nickel oxides, zirconium oxides, aluminum oxides, niobium oxides, tantalum oxides and the like) as memory resistors, each memory module comprises two or more memory resistors, the first electrode of each memory resistor is connected with the same gating device, and the second electrode of each memory resistor is coupled with different bit lines, thus a structure that a plurality of memory resistors share the same gating device in the same memory module is formed. The memory operation comprises a method of write operation and a method of read operation. The memory can improve the integrated memory density significantly and the memory operation fails to interfere with the other modules.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a resistance conversion memory and a storage operation method for the memory. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, FLASH cannot be expanded unlimitedly with the development of technology generations. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive switching memory (resistive switching memory) has attracted a lot of attention because of its high density, low cost, and the characteristics of breaking through ...

AI Technical Summary

Problems solved by technology

The disadvantage of the interleaved memory array is that since there is no isolation between memory cells, the parasitic current (sneak current) is relatively large, resulting in serious interference between unselected cells when the selected cell is operated, causing misoperation

This shortcoming reduces reliability, increases the complexity of circuit design, and leads to a decrease in memory read speed

Images