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Method for plating carbon film on ampoule internal wall for CdZnTe crystal growth and apparatus thereof

A technology of quartz ampoule and crystal growth, which is applied in gaseous chemical plating, metal material coating process, coating, etc., and can solve problems such as diffusion

Inactive Publication Date: 2009-04-01
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since the growth temperature is close to the softening point of quartz, it is easy to cause impurities in the quartz to diffuse into the material.

Method used

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  • Method for plating carbon film on ampoule internal wall for CdZnTe crystal growth and apparatus thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: The method for coating the inner wall of the quartz ampoule with a carbon film of the present invention is realized through its special device, that is, a vacuum coating device.

[0014] Referring to Fig. 1, the vacuum coating device used among the present invention comprises quartz furnace tube 1, heating furnace 2, quartz ampoule 3, vacuum system 4, stainless steel pipe joint 5, vacuum valve 6, ethanol storage bottle 7, regulating valve 8, sealing ring 9; the quartz furnace tube 1 is placed in the heating furnace 2 embedded with the electric heating wire, and a quartz ampoule 3 to be carbon-plated is arranged in the cavity of the quartz furnace; one end of the quartz furnace tube 1 is provided with a sealing ring 9 is connected to a stainless steel joint 5, a round hole is opened in the center of the stainless steel joint and a short tube is connected to the vacuum system 4; a vacuum valve 6 is installed on the connecting pipe of the vacuum system 4 to ad...

Embodiment 2

[0019] Embodiment 2: In this embodiment, the same vacuum coating device as in Embodiment 1 above is used.

[0020] The process steps of the coating method in this embodiment are exactly the same as those in Embodiment 1 above. The difference is that some process parameters have been changed. Its different process parameters are: (1) The vacuum degree in the quartz furnace tube is 10 -2 Pa; (2) The heating temperature of the heating furnace during coating is 1050°C, and keep baking for 10 minutes; (3) Control the flow rate of absolute ethanol into the quartz ampoule to be 0.5ml / min. Finally, a quartz ampoule whose inner wall is coated with a carbon film is obtained.

Embodiment 3

[0021] Embodiment 3: In this embodiment, the same vacuum coating device as in Embodiment 1 above is used.

[0022] The process steps of the coating method in this embodiment are exactly the same as those in Embodiment 1 above. The difference is that some process parameters have been changed. Its different process parameters are: (1) The vacuum degree in the quartz furnace tube is 10 -1 Pa; (2) The heating temperature of the heating furnace during coating is 980°C, and keep baking for 30 minutes; (3) Control the flow rate of absolute ethanol into the quartz ampoule to be 1.5ml / min. Finally, a quartz ampoule whose inner wall is coated with a carbon film is obtained.

[0023] Using the carbon-coated quartz ampoule obtained in the embodiment of the present invention, the experiment of CdZnTe crystal growth effect is carried out. After loading the CdZnTe raw material, the crystal after pure high-temperature synthetic growth has an extremely low carbon content; it shows that the c...

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Abstract

The invention relates to a method for coating a carbon film on the inner wall of a quartz ampoule applied to CdZnTe crystal growth, and equipment thereof, pertaining to the technical field of the coating technique of a vessel used for special crystal growth. The invention adopts a vacuum thermal decomposition coating technique; the quartz ampoule to be coated with carbon is put into a quartz furnace tube of a heating furnace; the vacuum degree thereof is maintained between 10<-1>Pa and 10<-3>Pa by virtue of a vacuum pumping system; at the same time, absolute ethyl alcohol which acts as a carbon source is pumped in, with the flow controlled between 0.5ml / min and 5ml / min; the quartz ampoule is heated in the vacuum until the temperature reaches the thermal decomposition coating temperature which is between 950 DEG C and 1100 DEG C; the heating is maintained for 10min and 60min at the temperature to guarantee the full deposition of the carbon; and the quartz ampoule coated with the carbon film is obtained after the temperature is reduced to room temperature. The method can produce the quartz ampoule coated with the carbon film, with high adhesion and compactness, and the carbon film is not easy to fall off, thereby being conducive to the synthetic growth of CdZnTe crystal.

Description

technical field [0001] The invention relates to a method and a device for coating a carbon film on the inner wall of a quartz ampoule for CdZnTe crystal growth, and belongs to the technical field of coating technology for containers for special crystal growth. Background technique [0002] CdTe and CdZnTe are compound semiconductor materials with small chemical bonding force, large space between atoms, and high degree of ionicity. Due to its small chemical bonding force and the introduction of thermomechanical stress during the crystal growth process, a large number of defects are generated in the crystal. Thermomechanical stress can be caused by several reasons: the crystal material in contact with the ampoule wall does not thermally shrink at the same rate as quartz; unstable high temperature gradients; the weight of the melt in the upper half of the crystal as it grows. The ampoule has a very important influence on the generation of defects in the crystal grown by the ve...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/52
Inventor 闵嘉华桑文斌戴灵恩王长君梁小燕施朱斌钱永彪滕建勇秦凯丰
Owner SHANGHAI UNIV
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