Ion fluidizing device on chip

A jet device, ion technology, applied in the field of aerospace, can solve the problem of not overcoming high-voltage operation, etc., to achieve the effect of reducing the working voltage, increasing the velocity of the ion jet, and improving the mass flow rate of the ion jet

Inactive Publication Date: 2009-03-11
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ion jet device structure proposed in the experimental part of this document belongs to a conventional corona discharge structure, and its implementation effect does not overcome the disadvantage of requiring high voltage operation

Method used

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  • Ion fluidizing device on chip
  • Ion fluidizing device on chip
  • Ion fluidizing device on chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment realizes 12 multi-stage on-chip ion jet devices fabricated on flexible substrates, including six single-stage accelerating electrodes, and the structure of every two adjacent single-stage accelerating electrodes is as follows: figure 1 , figure 2 , image 3 Shown.

[0035] The single-stage accelerating electrode is composed of five parts: hollow electrode 103, polarized electrode array 102, flow channel side wall 104, polarized electrode array connection 105, and hollowed-out electrode connection 106. All five parts are arranged on the base on the surface of sheet 1;

[0036] The polarized electrode array 102 is composed of a plurality of discrete planar polarized electrodes whose number is greater than two. Between every two planar polarized electrodes, there is a gas gap to isolate them from each other. The electrode material of each discrete planar polarized electrode , is a conductive or semiconducting electrode material with a large aspect ratio...

Embodiment 2

[0046] This embodiment describes a cooling device using the flow channel sidewall 104 as a cooling fin. A single-stage accelerating electrode constitutes a multi-stage on-chip ion jet device. The electrode structure of any two adjacent accelerating electrodes is as follows: figure 1 , figure 2 , image 3 Shown, specifically described as described in Example 1.

[0047] Wherein, there is a silicon oxide insulating layer with a thickness of about 2 microns on the surface of the substrate 1, which is insulated from all components of the ion jet device on the substrate 1, and a flow channel groove 104 is arranged on the substrate 1, and the width of the groove is 300 μm with a depth of 30 μm. The structure and material arrangement of the polarizing electrode array 102 are the same as those in Embodiment 1. The side wall 104 of the flow channel has a height of 420 μm and a thickness of 50 μm, and is made of single crystal silicon, and its surface is covered with silicon oxide ...

Embodiment 3

[0050] This embodiment describes a cooling device using the sidewall of the channel as a cooling fin, and the difference from Embodiment 2 is that a single-stage on-chip ion jet device is provided.

[0051] A voltage drop of 300V is applied between the polarized electrode array 102 and the hollow electrode 103 of the single-stage fluidic device. By measuring the chip surface temperature, it is found that under the condition that there is a fan as another forced convection source of air, the present invention The solution provided increases the cooling effect of the entire cooling device by about 2 times. Compared with the effect of Example 2, it shows that the ion jet with multi-stage structure is more efficient and can generate greater wind speed and ion mass flow rate, but the single-stage structure is simpler and smaller, and is more suitable for cooling devices In areas where the size of the occupied space is very sensitive.

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Abstract

The invention provides an ion-on-substrate jetting device, belonging to the fields of aerospace technology and microelectronic technique; the device comprises a single-step accelerating electrode which consists of five parts as follows: a hollow electrode, a polarized electrode array, a runner side wall, a polarized electrode array connecting line and a hollow electrode connecting line; the five parts are arranged on the surface of a substrate; the structure uses an electrode array with large length-diameter-ratio on the substrate is used as a gas molecular ionization device; a thin wall structure on the substrate is used as a flowing pressure control device and the runner is formed; the hollow electrode is used as a control device used for controlling the ion jetting direction and the accelerating amplitude and a continuous multi-step hollow electrode of multi-step accumulated acceleration can be provided. The whole structure can realized by the manufacture technique on the substrate of the microelectronic processing technique; therefore, the device is extremely beneficial for regular arrays, integration and miniaturization, greatly improves the core performance indexes such as ionization efficiency, stability, service life and the like, and is extremely applicable to being used for micro-aircrafts and chip cooling devices.

Description

technical field [0001] The present invention relates to a device in the field of aerospace technology and microelectronics technology, in particular to an on-chip ion jet device. Background technique [0002] In the field of microelectronics technology, the cooling problem of semiconductor chips has become an important technical bottleneck restricting the development of high-performance processing chips in this field. Passive cooling technology is still unable to meet the cooling requirements of the CPU, so active cooling technology is still the mainstream. Conventional active cooling technologies rely on fans, which have the disadvantages of high noise, large volume, high power consumption, and low efficiency. However, alternative water-cooling and oil-cooling technologies require liquid pumps, resulting in high noise, large system volume, and complex construction. And there are considerable security risks, so there are only relatively narrow application prospects. The io...

Claims

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Application Information

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IPC IPC(8): B64G1/40H01L23/34
CPCH01L2924/0002
Inventor 侯中宇蔡炳初
Owner SHANGHAI JIAO TONG UNIV
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