Rare earth ion doped down-conversion luminescent transparent glass-ceramics

Abstract

The invention discloses a rare earth ion doped down-conversion luminescence transparent microcrystalline glass, which is obtained by doping rare earth ion in an oxyfluoride microcrystalline glass substrate with the molar concentration of the rare earth ion to be 1-40% and the volume percent of the fluoride microcrystal in the glass matrix to be 1-50%. The down-conversion luminescence transparent microcrystalline glass of the invention has the advantages of low phonon energy of the fluoride, excellent machining characteristic and chemical stability of the oxide glass and quantum efficiency which is more than one; the glass slowly ages under the condition of outdoor long-term illumination and can also be machined into transparent plate shape or even ultrathin plate shape, therefore, the glass is one of the best selections which can be used in solar cells, and has wide application prospect.

Description

technical field [0001] The invention relates to a transparent glass-ceramic, in particular to a transparent glass-ceramic capable of down-converting luminescence through rare earth ion doping. Background technique [0002] In the 21st century, mankind will face the major challenge of achieving sustainable social and economic development. In the face of the current depletion of fossil fuels and the negative issues such as the greenhouse effect, acid rain and agricultural production reduction induced by massive consumption, there is an urgent need to develop And use new energy and green renewable energy. The energy emitted by the sun per second is about 1.6×10 23 kilowatts, of which up to 8 x 10 13 Kilowatts, the total amount of solar energy reaching the earth's surface in one year is about 1.892×10 standard coal 13 100 billion tons, which is 10,000 times the proven reserves of major energy sources in the world. In view of this, solar energy will surely play an important r...

AI Technical Summary

Problems solved by technology

For a long time, people have been committed to improving the material processing technology to increase the photoelectric conversion efficiency of silicon cells. Through this method, the highest photoelectric conversion rate of silicon cells has reached 24.7%, but it is difficult to further improve the material processing technology alone. Improve its energy conversion efficiency

[0003] Since silicon semiconductor has a fixed band gap (1.12eV), it is impossible to completely absorb and convert natural sunlight energy. Only sunlight with a wavelength of less than 1100nm can achieve photoelectric conversion in silicon crystals, while infrared light with a wavelength greater than 1100nm cannot It cannot be utilized; on the other hand, the lower limit of the effective response spectrum of silicon crystals to sunlight is 400nm, and ultraviolet light with a wavelength of less than 400nm cannot be utilized by silicon solar cells.

At the same time, within the solar light spectrum range that can be effectively used by silicon crystals, a photon with an energy greater than 1.12eV can only produce one electron-hole pair, and the remaining energy will be converted into heat and dissipated, which will lose about 30% of the energy of sunlight