Optical-level quartz crystal temperature-variable temperature difference method growth technique

Abstract

The invention discloses an optical level quartz crystal temperature-changing temperature differential method growth technology, comprising the following steps that: firstly, raw materials of seed crystal and quartzite are washed, deionized water and a growth-promoting media are prepared, and a high-pressure autoclave is washed by ionized water and is drained off by a membrane pump; secondly, a raw material basket holding the quartzite is put in the washed autoclave, the prepared grow-promoting media and a seed crystal bracket hung with the seed crystal are poured into the autoclave, the liquid level is measured, and the autoclave opening is sealed; thirdly, a temperature control system is started, the high-pressure autoclave is heated, the parameters of temperature, pressure and time of the sealed high-pressure autoclave are adjusted so that the quartz crystal is grown and formed. The optical level quartz crystal temperature-changing temperature differential method growth technology is characterized by determining the lineage grade of the seed crystal, the a equivalent concentration of the grow-promoting media, the parameter of a filling degree of the autoclave, the temperature changing and differential parameter and the pressure parameter of the heated high-pressure autoclave. According to the quartz crystal produced by the technology, the lineage index is more than the grade A, the etch channel density is less than 10 strips per centimeter<2>, the value of Q is more than or equal to 3.0x10<6>, an inclusion is higher than the Ia type, the optical uniformity delta n is less than or equal to 5x10<-6>, and the spectrum transmission ratio is more than 95 percent when the wavelength is between 800 and 2, 500 nanometers.

Description

technical field [0001] The invention relates to a growth process of quartz crystal, in particular to a process of growing optical-grade quartz crystal in an autoclave by a hydrothermal temperature difference crystallization method. Background technique [0002] The artificial quartz crystal growth process is realized in a vertical sealed autoclave by using the hydrothermal temperature difference method. Since the growth of quartz crystals by the hydrothermal temperature difference method is carried out in an alkaline solution and under relatively complex physical and chemical conditions, and its growth is completed in a sealed autoclave, the whole process of growth cannot be directly observed. . The ratio of different alkaline solutions, the selection of filling degree parameters in the autoclave, and the control of temperature, time, and pressure parameters during autoclave heating will all have an important impact on the grade of the grown quartz crystal. This increases ...

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Problems solved by technology

[0003] The purpose of the present invention is to provide an improved optical-grade quartz crystal variable temperature temperature difference method growth process, which can effectively solve the problem that the existing technology is difficult to meet the optical-grade quartz crystal on the pulse index, inclusion index, corrosion tunnel density index, Q value index, optical uniformity index, spectral transmittance index high-performance requirements, and can further solve the existing optical-grade quartz crystals that cannot meet the high-pixel requirements of high-tech products such as digital cameras, monitors, and video phones. question

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