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Metallurgy purification method for polysilicon

A purification method and polysilicon technology, which are applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of high energy consumption, environmental pollution, and low polysilicon purity, and achieve the effect of low energy consumption and improved purity.

Inactive Publication Date: 2008-12-10
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The above prior art has at least the following disadvantages: high energy consumption, environmental pollution, and low purity of polysilicon

Method used

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  • Metallurgy purification method for polysilicon
  • Metallurgy purification method for polysilicon
  • Metallurgy purification method for polysilicon

Examples

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specific Embodiment 1

[0040] Break 10g of metal silicon block 441#, and add the alkaline slagging agent Na with a slag-gold ratio of 0.20 2 O-CaO-CaF 2 -SiO 2 (10:20:10:60), mixed evenly in a mortar, put into a medium-frequency induction resistance furnace with a power of 20KV and smelted under the protection of inert Ar gas. After heating up for 1 hour, keep warm at 1550°C for 30 minutes and cool down. The silicon ingots are crushed, ball milled and sieved to obtain 100-300 mesh products. Silica fume passed through 1% dilute ammonia water / H 2 o 2 Soak in the mixed solution and ethanol organic solvent for degreasing treatment, wash with deionized water and dry in an oven at 100°C. Under the condition of magnetic stirring, quickly pour 100 mL of HCl solution with a concentration of 1 mol / L into the dried silicon powder, leaching for 2 hours at a temperature of 60 ° C, and after washing with deionized water, add aqua regia and concentrated H 2 SO 4 : Concentrated HNO 3 (V:V=2:1) ​​or concentr...

specific Embodiment 2

[0042] Break 10g of metal silicon block 441# into a medium-frequency induction resistance furnace with a power of 20KV and melt it under the protection of inert Ar gas. After heating up for 1 hour, keep warm at 1550°C for 30 minutes and cool down. The silicon ingots are crushed, ball milled and sieved to obtain 100-300 mesh products. Silica fume passed through 1% dilute ammonia water / H 2 o 2 Soak in the mixed solution and ethanol organic solvent for degreasing treatment, wash with deionized water and dry in an oven at 100°C. Under the condition of ultrasonic vibration, quickly pour 100 mL of HCl solution with a concentration of 1 mol / L into the dried silicon powder, leaching for 2 hours at a temperature of 60 ° C, and after cleaning with deionized water, add aqua regia and concentrated H 2 SO 4 : Concentrated HNO 3 (V:V=2:1) ​​or concentrated HNO 3 :H 2 o 2 (V:V=1:1) 100mL, leached at 60°C for 2h, washed with deionized water, added 1mL of 2.5% mannitol solution for soa...

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Abstract

The invention discloses a method for metallurgical purification of a polysilicon, which particularly to a purification technology being capable of decreasing the contents of boron and phosphor which influence the battery efficiency. The method comprises the following steps: sodium oxide, lime and fluorite are added during the slagging and oxidation process, boron and phosphor are made into oxide by a displacement reaction, the oxide is dissolved in slag, the melting temperature is reduced by adding with the fluorite, the fluxing medium dissolves in the leaching process of the dilute acid, the oxidizing acid oxidizes and dissolves boride and metallic compounds at the transition zone, and then the complexant for hydrofluoric acid and boron corrodes the surface of silicon, and the boron impurity is extracted from the surface of silicon particles to a solvent under the effect of complexant. The method has low energy consumption and no pollution, and can improve the purity of polysilicon.

Description

technical field [0001] The invention relates to a method for purifying polysilicon, in particular to a metallurgical purification method for polysilicon. Background technique [0002] Facing the two global hot issues of energy crisis and environmental protection, the utilization of solar energy as a renewable energy source and the production of related materials have gradually attracted people's attention. In the past ten years, the global demand for solar polysilicon has grown at an average annual rate of 30%. Metal silicon (2N) produced in large quantities in the industry is obtained by reducing silicon ore or quartz sand with coke, charcoal and other reducing agents, in which a large number of chemical impurity elements and crystal defects will affect the performance of semiconductor devices (9-12N) or solar silicon cells (5-7N) photoelectric conversion efficiency. [0003] The purification methods of polysilicon in the prior art include bulk purification method and impu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037C30B29/06
Inventor 陈红雨罗绮雯李核叶其辉
Owner SOUTH CHINA NORMAL UNIVERSITY
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