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Production method for optical fiber coupling module of glow AlGaInP semiconductor laser

An aluminum gallium indium phosphide and optical fiber coupling technology, which is applied in semiconductor lasers, optical waveguide coupling, lasers, etc., can solve the problems of large beam divergence angle, poor beam quality, and practical application difficulties, and achieve high output fiber laser power, The effect of simple preparation process

Inactive Publication Date: 2008-12-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
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  • Description
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  • Application Information

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Problems solved by technology

Despite its high electro-optical conversion efficiency, small size, and long life, some inherent defects of edge-emitting lasers, such as large beam divergence angles and poor beam quality, have brought great difficulties to practical applications.

Method used

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  • Production method for optical fiber coupling module of glow AlGaInP semiconductor laser
  • Production method for optical fiber coupling module of glow AlGaInP semiconductor laser
  • Production method for optical fiber coupling module of glow AlGaInP semiconductor laser

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preparation example Construction

[0043] like figure 1 shown, figure 1 The flow chart of the preparation method of the red light aluminum gallium indium phosphorus semiconductor laser fiber coupling module provided by the present invention, the method includes the following steps:

[0044] Step 101 : sequentially preparing a gallium arsenide buffer layer and a gallium indium phosphorus buffer layer on an N-type gallium arsenide substrate;

[0045] Step 102 : sequentially preparing an AlGaInP confinement layer, an optical waveguide layer and an active layer on the GaInP buffer layer, and forming confinement heterostructures respectively;

[0046] Step 103: photolithography etching the light mesa on the epitaxial wafer;

[0047] Step 104: depositing an electrical insulating film on the light-emitting mesa;

[0048] Step 105: preparing a P-surface electrode on the electrical insulating film;

[0049] Step 106 : preparing an N-surface electrode after thinning and polishing the N-type substrate;

[0050] Step ...

Embodiment

[0068] see figure 2 and image 3 , the preparation method of the red light aluminum gallium indium phosphorus high-power semiconductor laser fiber coupling module provided by the present invention, the specific structure of the device and the preparation process include the following steps:

[0069] (1) An N-type off-angle gallium arsenide substrate 1 is selected, and an N-type gallium arsenide buffer layer 2 and an N-type gallium indium phosphorus buffer layer 3 are epitaxially grown on the N-type gallium arsenide substrate 1 by a metal organic compound vapor deposition method.

[0070] (2) On the N-type Gallium Indium Phosphorus buffer layer 3, epitaxially grow the N-type AlGaInP lower cladding layer 4 with high Al composition, the AlGaInP lower optical waveguide layer 5 with low Al composition, and the active region sequentially 6. Aluminium Gallium Indium Phosphorus upper optical waveguide layer 7 with low Al composition, P-type AlGaInP upper cladding layer 8 with high A...

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Abstract

The invention discloses a preparation method of an infrared Al-Ga-In-P semiconductor laser fibre coupling module, relating to the technical field of semiconductor laser. The preparation method comprises a Ga-As damping layer and a Ga-In-P damping layer which are respectively prepared on an N-typed Ga-As underlay; the Ga-In-P damping layer is sequentially provided with a Al-Ga-In-P limiting layer, a fibre waveguide layer and an active layer and forms a structure which respectively limits the heterostructure; a light outlet table is etched on an epitaxial wafer; an electric insulation film is deposited on the light outlet table; a P-surface electrode is prepared on the electric insulation film; an N-surface electrode is prepared after an N-typed underlay is thinned and polished; sheets with P-electrode and N-electrode are cleaved as strips so as to be taken as cavity resonator surfaces of the laser; furthermore, an antireflective film and a high-reflection film are steam-plated on the front cavity surface and the rear cavity surface of the laser; a single mandrel laser is sintered onto the copper heat sink; a cylindrical lens is adopted to compress the vertical divergence angle of the semiconductor laser; a self-focus lens is adopted to compress and focus the light beam of the semiconductor laser and couple the light beam to the multi-mode fibre. The preparation method of the invention is beneficial to preparing the semiconductor laser with large power.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a red light high-power semiconductor laser fiber coupling module. Background technique [0002] Semiconductor lasers are widely used in optical storage, optical display, optical communication and other fields due to their advantages of small size, long life and high electro-optical conversion efficiency. Among them, the red semiconductor laser with a lasing wavelength of 630nm to 690nm is made of aluminum gallium indium phosphorus system, which has a wide range of application prospects in optical storage, medical treatment, laser display and other fields. The specific application field mainly depends on the output power of the laser, Beam divergence angle, device reliability and other parameters. [0003] For example, AlGaInP semiconductor lasers with output power less than 200mW and fundamental transverse mode are mainly used in the field of...

Claims

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Application Information

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IPC IPC(8): H01S5/00G02B6/42
Inventor 徐云陈良惠张玉芳宋国峰李玉璋种明郑婉华曹青
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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