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Method and device for preparing high-frequency soft magnetic thin film

A soft magnetic thin film, radio frequency magnetron sputtering technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc. The method is simple and easy to implement, and the effect of excellent high frequency characteristics

Inactive Publication Date: 2008-09-10
LANZHOU UNIVERSITY
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  • Application Information

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Problems solved by technology

But as far as the current reports are concerned, this method can only be applied to soft substrates, and it is not suitable for the microelectronics industry to form films on hard substrates such as Si or glass.
[0005] In addition, when using the prior art to prepare a soft magnetic film with a specific composition, the cut-off frequency of the product is generally determined, and there is no method for controlling the cut-off frequency of the product in the prior art

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  • Method and device for preparing high-frequency soft magnetic thin film
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  • Method and device for preparing high-frequency soft magnetic thin film

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Embodiment Construction

[0019] The equipment used to prepare the thin film in the present invention is the RF sputtering part of the FJL560-1 ultra-high vacuum magnetron and ion beam combined sputtering equipment produced by Shenyang Zhongkeyi in 2003. But the target material that the present invention adopts is a kind of composite target, is exactly the magnetic metal target (composition can be Fe x co 1-x , x=0~0.7) uniformly place a non-magnetic metal sheet, and then use traditional radio frequency magnetron sputtering equipment to deposit a soft magnetic film on the Si or glass surface. Thin film deposition conditions are: background vacuum -5 Pa, sputtering power 50W corresponds to a power density of 1.7W / cm 2 , the substrate is water-cooled, the Ar flow rate is 20SCCM, and the Ar pressure is 0.2Pa. In the thin film preparation process, by changing the angle α between the normal line of the target and the line connecting the center of the target to the center of the substrate, the purpose of s...

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Abstract

The invention discloses a method and a device for in-place preparing an adjustable soft magnetic film with high-frequency property. The method adopts a radio frequency magnetron sputtering method of the prior art; a small quantity of nonmagnetic metal material is also sputtered on a substrate when magnetic metal material is sputtered. The atom percentage of nonmagnetic metal and magnetic metal sputtered on the substrate is between 3 and 20. The device is the same with the prior radio frequency sputtering device except for a sputtering target; the sputtering target material is a composite target.

Description

technical field [0001] The invention relates to a preparation technology of a magnetic material, more precisely to a method for preparing a soft magnetic thin film with adjustable high-frequency characteristics in situ. Background technique [0002] With the continuous advancement of science and technology, the transmission speed of signals is getting faster and faster, which requires the operating frequency of information transmission devices to be higher and higher. For example, in order to achieve a transmission speed of 1GBit / s in a hard disk, the magnetic material in the magnetic head must still have excellent soft magnetic properties at a frequency of 1GHz. Another example is that in the microelectronics integration process, the most difficult device to integrate is the inductor, and the application of thin-film inductors is imperative; to significantly improve the performance of thin-film inductors, it is necessary to combine high-frequency soft magnetic films with th...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/14C23C14/54
Inventor 薛德胜范小龙
Owner LANZHOU UNIVERSITY
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