High-performance carbon film resistor, and preparation method thereof
A carbon film resistor, high-performance technology, used in resistors, adjustable resistors, circuits, etc., can solve the problems of large influence of voltage and frequency, poor stability of carbon film slurry, etc., and achieve small influence of voltage and frequency. , The effect of low production cost and small noise electromotive force
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Embodiment 1
[0026] A high-performance carbon film resistor, the parts by weight of each component of the carbon film slurry raw material are:
[0027] 15 parts of graphite, 8 parts of carbon black, 1 part of phenolic resin, 2 parts of silica, 1 part of binder, 2 parts of silver oxide, 3 parts of copper oxide, and 30 parts of propanol.
[0028] Its preparation method comprises the following steps:
[0029] Mix graphite and carbon black, ball mill for 30 minutes, sinter at 170°C for 20 minutes under nitrogen protection, add other slurry raw materials, ultrasonically treat for 30 minutes, pass through a 130 μm filter membrane to obtain carbon film slurry; magnetron sputtering the carbon film slurry in On the ceramic substrate, control the accelerating voltage to be 300V, the magnetic field to be 200G, the current density to be 50mA / cm, the power density to be 30W / cm, and the film thickness to be 0.2μm to obtain the finished product.
Embodiment 2
[0031] A high-performance carbon film resistor, the parts by weight of each component of the carbon film slurry raw material are:
[0032] 25 parts of graphite, 16 parts of carbon black, 3 parts of phenolic resin, 5 parts of silica, 3 parts of binder, 3 parts of silver oxide, 5 parts of copper oxide, and 40 parts of propanol.
[0033] Its preparation method comprises the following steps:
[0034] Mix graphite and carbon black, ball mill for 40 minutes, sinter at 180°C for 28 minutes under nitrogen protection, add other slurry raw materials, ultrasonically treat for 45 minutes, pass through a 160 μm filter membrane to obtain carbon film slurry; magnetron sputtering the carbon film slurry in On the ceramic substrate, control the accelerating voltage to be 340V, the magnetic field to be 300G, the current density to be 60mA / cm, the power density to be 40W / cm, and the film thickness to be 0.8μm to obtain the finished product.
Embodiment 3
[0036] A high-performance carbon film resistor, the parts by weight of each component of the carbon film slurry raw material are:
[0037] 20 parts of graphite, 12 parts of carbon black, 2 parts of phenolic resin, 3 parts of silica, 2 parts of binder, 2.5 parts of silver oxide, 4 parts of copper oxide, and 35 parts of propanol.
[0038] Its preparation method comprises the following steps:
[0039] The graphite and carbon black were mixed, ball milled for 35 minutes, sintered at 175°C for 24 minutes under nitrogen protection, then added with other slurry raw materials, ultrasonically treated for 40 minutes, and passed through a 145 μm filter film to obtain carbon film slurry; the carbon film slurry was magnetron sputtering in On the ceramic substrate, control the accelerating voltage to be 320V, the magnetic field to be 250G, the current density to be 55mA / cm, the power density to be 35W / cm, and the film thickness to be 0.5μm to obtain the finished product.
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