CMOS image sensor and method for manufacturing the same
An image sensor and gate technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problems of miniaturization of difficult products, high power consumption, complex manufacturing process, etc., to improve performance, increase The effect of width
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[0019] A CMOS image sensor and a manufacturing method thereof according to an embodiment of the present invention will be described below with reference to the accompanying drawings.
[0020] 1 is a layout diagram illustrating a unit pixel of a CMOS image sensor having a structure including four transistors and one photodiode (PD) according to an embodiment; FIG. 2 is a diagram illustrating the CMOS image sensor in FIG. 1 Sectional view along line II-II'.
[0021] 1 and 2 illustrate one unit pixel including one photodiode PD and four MOS transistors formed on an epitaxial (epi) layer 102 on the surface of a semiconductor substrate 101 (eg, a single crystal silicon wafer). The substrate includes: an active region and a device isolation region (such as STI); a device isolation (isolating) layer 103 is formed in the device isolation region of the semiconductor substrate 101 having an epitaxial layer 102; a gate 105 is formed on the semiconductor On the gate insulating layer 104 ...
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