III-V family metal oxide semiconductor luminous fieldistor and method for producing the same

Abstract

The invention discloses a III-V group metal oxide semiconductor type luminescent field effect transistor (FET) and a method for preparing the same, wherein the FET comprises a p-type drain region, an active area, an n-type semiconductor layer, a buffer layer and a substrate which are stacked in turn in vertical direction; a p-type gate region is arranged at the left side of the transverse step structure of the n-type semiconductor layer, while an n-type source region is arranged at the right side of the step structure; a grid electrode oxidation layer and a grid electrode are stacked on the p-type gate region; an electronic channel, which is formed by a MOS structure on the surface of a gate region semiconductor, is arranged between the p-type gate region and the grid electrode oxidation layer; the n-type source region is provided with a source electrode, while the p-type drain region is provided with a drain electrode. The transverse structure of the step of the invention is used to control the luminous intensity of a device by means of metal-oxide-semiconductor contact field effect, while the vertical structure is used to generate recombination luminescence; moreover, the structure has high luminous efficiency and high brightness and is convenient for control.

Description

technical field [0001] The invention relates to a III-V group metal oxide semiconductor light-emitting field-effect transistor and a preparation method thereof. Background technique [0002] In the prior art, the basic structure of a light emitting diode (LED) is composed of a p-type electrode, an active light-emitting region and an n-type electrode. Connect the p-terminal and n-terminal of the LED into the circuit, supply power through a constant current source, and adjust the terminal voltage of the LED to control the luminous intensity of the LED. At present, the manufacturing technology of light-emitting transistors is not yet mature, and is still in the initial research stage. The main methods are: one is an NPN light-emitting transistor device manufactured according to the traditional transistor principle, which not only uses the p-type doped region of the device to emit light, but also controls it as a base region. However, because the base region is very thin, most ...

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a III-V metal oxide semiconductor light-emitting field-effect transistor with high luminous efficiency and high brightness and a preparation method thereof for the defect of low luminous efficiency of light-emitting transistors in the prior art

Images