Metal conducting wire mosaic structure and method of manufacture

A technology of metal wires and inlaid structures, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of RC delay and large leakage current, and reduce RC delay and leakage current, Guaranteed accuracy and reduced effects of capacitive coupling

Active Publication Date: 2008-06-04
INNOCOM TECH SHENZHEN +1
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In order to overcome the capacitive coupling between metal wires in the prior art metal wire mosaic structure, the RC delay caused by capacitive coupling and the large leakage current, it is necessary to provide a method that effectively reduces the capacitive coupling between metal wires, and uses capacitive coupling RC delay and leakage current caused by the metal wire damascene structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal conducting wire mosaic structure and method of manufacture
  • Metal conducting wire mosaic structure and method of manufacture
  • Metal conducting wire mosaic structure and method of manufacture

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Please refer to Figure 6 , which is a structural schematic diagram of a preferred embodiment of the metal wire damascene structure of the present invention. The metal wire mosaic structure 2 includes a substrate 20, a first dielectric layer 21 is disposed on the substrate 20, the first dielectric layer 21 has a plurality of grooves 27, and a plurality of metal wires are embedded in the plurality of grooves 27. twenty four. A cover layer 25 is disposed on the first dielectric layer 21 and the metal wire 24 , and the cover layer 25 is used to protect the metal wire 24 and block the diffusion of the metal wire 24 . A second dielectric layer 26 is disposed on the cover layer 25 , and the second dielectric layer 26 is used to insulate the plurality of metal wires 24 from other electronic devices.

[0026] Wherein, the first dielectric layer 21 includes a first sub-dielectric layer 211, a second sub-dielectric layer 212 and a third sub-dielectric layer 213 stacked, the fir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a mosaic structure of metal wires, which includes a basement, a dielectric layer and a plurality of metal wires. The dielectric layer is arranged at the basement, which has a plurality of grooves. The metal wires are inlayed in the plurality of grooves. The dielectric layer includes at least two sub-dielectric layers which are positioned by layer-cake and an air gap is kept between at least a sub-dielectric layer and the metal wires. The mosaic structure of the metal wires can effectively reduce capacitance coupling among the metal wires as well as RC delay and leakage current caused by the capacitance coupling. The invention also provides a method for manufacturing the mosaic structure of the metal wires.

Description

technical field [0001] The invention relates to a metal wire inlaid structure and a manufacturing method thereof, in particular to a metal wire inlaid structure for reducing capacitive coupling between metal wires and a manufacturing method thereof. Background technique [0002] In the design of large-scale and ultra-large-scale integrated circuits, the metal wire wiring method mainly adopts the damascene process. The traditional damascene manufacturing process of metal wires is mainly to form a mosaic structure groove for wiring in the dielectric layer, inlay a metal material with better conductivity in the groove, and then remove the excess by chemical mechanical polishing. metal and dielectric layers to form damascene wires, and finally a capping layer is formed on the metal wires. [0003] Please refer to figure 1 , which is a schematic diagram of a metal wire inlaid structure in the prior art, the metal wire inlaid structure 1 includes a substrate 10; a dielectric lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/522H01L21/768
Inventor 颜硕廷
Owner INNOCOM TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap