A programmable non volatile memory unit, array and its making method

Abstract

The invention discloses a programmable nonvolatile memory unit, an array and a manufacture method thereof. The invention provides a metal layer, a contact hole, a barrier layer, a plurality of polysilicons and an underlay with an active area. The polysilicons and the underlay with the active area form a plurality of transistors including a grid, a drain and a source. The source of the transistors forms a plurality of source lines. The polysilicons form a plurality of word lines. The metal lines in the metal layer form a plurality of bit lines. The metal layer, the contact hole, the barrier layer and the active area are connected in turn to form a capacitor, wherein, the barrier layer is used as the medium layer of the capacitor; the transistors and the capacitor are correspondingly connected to form a memory unit and arranged in corresponding wordlines, bit lines and source lines. The invention greatly improves the storage stability of the memory, further reduces the memory area and is good for the application of large scale integrated circuit.

Description

technical field [0001] The invention mainly relates to a semiconductor memory device, in particular to a programmable non-volatile memory unit, an array and a manufacturing method thereof. Background technique [0002] With the continuous development of integrated circuit technology, the requirements for the manufacturing technology of integrated circuit chips are getting higher and higher, especially for the manufacturing technology of semiconductor memory devices. Change the existing semiconductor memory manufacturing technology. There are many types of semiconductor memory, among which non-volatile semiconductor memory is widely used. Currently, nonvolatile memories include read-only nonvolatile memories, programmable read-only nonvolatile memories, programmable erasable read-only nonvolatile memories, and the like. [0003] Existing programmable non-volatile memories often use fuse or anti-fuse manufacturing technology, which requires special processes and materials in...

AI Technical Summary

Problems solved by technology

Therefore, the use of programmable non-volatile memory based on fuse or anti-fuse manufacturing technology not only increases the cost of chip manufacturing, but also greatly reduces the cost of logic devices due to the use of special processes and special materials in the manufacturing process. reliability

[0004] In addition, the existing programmable non-volatile memory cells manufactured based on the logic process need more than two Metal Oxide Semiconductor (MOS, Metal Oxide Semiconductor) transistors, which occupy a relatively large area.

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