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Method for preparing p-type copper-sulfur-containing transparent conductor film

A technology of transparent conductive film and copper-sulfur, which is applied in vacuum evaporation plating, coating, sputtering plating, etc., can solve the problems that the research on sulfide film deposition has not been reported.

Active Publication Date: 2008-03-05
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PLD has high effectiveness and universality, but it is generally only used to deposit oxide films, and the deposition research of sulfide films has not been reported.

Method used

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  • Method for preparing p-type copper-sulfur-containing transparent conductor film
  • Method for preparing p-type copper-sulfur-containing transparent conductor film
  • Method for preparing p-type copper-sulfur-containing transparent conductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] CuAlS obtained by vacuum solid-state reaction and SPS sintering 2 The circular block is the target material, and the diameter of the target material is 15mm. The quartz glass plate was used as the substrate (substrate), and was ultrasonically cleaned by deionized water, dilute HCL, acetone, absolute ethanol, and deionized water for 20 minutes each. The distance between the fixed target surface and the substrate surface is about 5cm.

[0029] maintain a high vacuum (10 -4 Pa), the substrate temperature is controlled at 600°C, the laser energy is 120mJ, the initial frequency is 1Hz, the pre-deposition is 5min, the frequency is changed to 5Hz, the deposition time is 60min, the deposition is completed, and the temperature is lowered to room temperature, then taken out, that is Amorphous CuAlS 2 thin film (XRD see Figure 1). The thickness of the film is not very uniform, the edge is thin and the middle is thick, and the scanning electron microscope observation is between...

Embodiment 2

[0031] Similar to Example 1, the difference is that Ar is used as the working atmosphere, and the working pressure is 10Pa, and the obtained amorphous CuAlS 2 (XRD is similar to Example 1) The film thickness is uniform, the thickness is 100nm, and the ultraviolet-near infrared transmission spectrum (Fig. 2) shows that the average transmission rate in the visible light range is greater than 75%. The conductivity test shows that it has p-type conductivity (the Seebeck coefficient in Table 1 is positive), the conductivity at variable temperature (150K-350K) is shown in Figure 3, and the conductivity at room temperature is about 2S / cm (see Table 1).

Embodiment 3

[0033] Similar to Example 2, the only difference is that Si sheet is used as the substrate to obtain amorphous CuAlS 2 Thin film (XRD is similar to embodiment 1), film thickness is about 100nm, and the room temperature conductivity recorded is close to embodiment 2 (seeing table 1), and conductivity test shows that it has p-type conductivity (seebeck coefficient in table 1 is positive value).

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Abstract

The present invention is pulse laser deposition (PLD) process for preparing p-type compound CuAlS2 in chalcopyrite structure and transparent doped conducting film. The PLD process prepares p-type compound CuAlS2 or doped film on the substrate of quartz glass, common glass or Si chip by using the compound block obtained through solid phase reaction and SPS sintering or no-pressure sintering as the target and under proper conditions of atmospheric pressure, substrate temperature, and laser strength and frequency. The prepared CuAlS2 film has p-type conductivity, high conductivity, high visible light transparency and other excellent optoelectronic performance, and may find its broad application foreground in electronics and optoelectronics.

Description

technical field [0001] The invention relates to a chalcopyrite structure compound CuAlS which can be used for p-type transparent conductors 2 The method of film preparation. The invention belongs to the technical field of transparent conductive material (TCM) film. Background technique [0002] A transparent conductor is a material that is highly transparent in the visible region and has good electrical conductivity. In 1907, Badeker first reported the translucent conductive CdO material [K.Badeker, Ann.Phys.Leipzig1907, 22, 749], which attracted people's attention. Until World War II, due to military needs, transparent conductors were widely valued and applied. Transparent conductors are basically oxides, also known as transparent conducting oxides (TCO). TCO can be divided into n-type and p-type according to the conductivity characteristics. n-type TCO materials such as In 2 o 3 :Sn(ITO), SnO 2 :F(FTO) and Zn:Al(AZO), as transparent electrodes, have been widely use...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/06B22F3/16C23C14/56
Inventor 黄富强刘敏玲陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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