Polishing method for zinc oxide single crystal substrate level substrate
A technology of zinc oxide single crystal and zinc oxide, which is applied to polishing compositions containing abrasives, grinding/polishing equipment, surface polishing machine tools, etc., can solve the problem that no ZnO single crystal substrate polishing process and process have been found, and the disclosure And other issues
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[0031] 1. Chamfer the cut zinc oxide wafer first, and then put it on the heating platform with the bare glue board to heat at a temperature of 120°C. Bond the zinc oxide wafer to the bare glue board evenly and firmly with an adhesive.
[0032] 2. Leveling and thinning: On the surface grinding machine, a cast iron grinding disc is used, and the abrasive material is silicon carbide (SiC) suspension (SiC:H 2 O weight ratio 1: 20), the pressure is set to 60g / cm 2 , Speed: 70 rpm, flow rate of polishing liquid: 150ml / min, when the thickness reaches 0.65mm, the grinding rate is relatively high, the grinding time is 2h, the surface of the wafer has no knife marks, and is relatively smooth.
[0033] 3. Mechanical polishing: On the grinding machine, use polyurethane grinding disc, first use W7 boron carbide (B 4 C) the suspension is used as a grinding liquid, (B 4 C:H 2 O weight ratio is 1:20), flow rate is 10ml / min, pressure: 70g / cm 2 , rotating speed: 100 rpm, grind to a thicknes...
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