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Method for preparing Te-Zn-Cd monocrystal in large volume

A cadmium zinc telluride, large-volume technology, applied in the field of preparing large-volume cadmium zinc telluride single crystals, can solve the problems of small CZT single crystal volume, achieve small lattice mismatch, simple and easy operation, and low dislocation density Effect

Active Publication Date: 2007-12-26
IMDETEK
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the shortcomings of the small volume of CZT single crystals grown in the prior art, the present invention provides a method for preparing large-volume CdZnTe single crystals, using a low-pressure vertical Bridgman method with external seed crystals to grow CZT crystals, which solves the problem of the polarity of the seed crystals The effect on seed growth, by overheating the melt, a large-volume CZT single crystal can be obtained, and the single crystal rate of the ingot can be increased at the same time

Method used

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  • Method for preparing Te-Zn-Cd monocrystal in large volume
  • Method for preparing Te-Zn-Cd monocrystal in large volume

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Embodiment 1

[0018] Embodiment 1: adopt component to be Cd 0.8 Zn 0.2 The crystal of Te is oriented to the seed crystal, and the growth surface of the seed crystal is the B face, and the seed crystal growth is performed.

[0019] First, select Cd 0.8 Zn 0.2 After directional cutting and mechanical polishing of Te single crystal, a crystal orientation seed crystal with a diameter of 10 mm and a length of 35 mm is processed, with a crystal orientation deviation of 40'. Using HNO 3 / HF=3:1 volume ratio of the prepared solution was etched for 3 seconds, the A and B surfaces of the seed crystal were determined, and the B surface was chamfered for marking, and the seeding growth surface was selected as the B surface. Then use 50 ml of bromine-methanol solution with a volume fraction of 2% of bromine to etch the seed crystal for 5 minutes to remove surface mechanical damage and dirt, and rinse the seed crystal with methanol after etching. Finally, use absolute ethanol to ultrasonically cle...

Embodiment 2

[0024] Embodiment 2: adopt component to be Cd 0.9 Zn 0.1The crystal of Te is oriented to the seed crystal, and the growth surface of the seed crystal is the B face, and the seed crystal growth is performed.

[0025] First, select Cd 0.9 Zn 0.1 After directional cutting and mechanical polishing, the Te single crystal is processed into a seed crystal with a diameter of 10mm and a length of 30mm in the crystal orientation, with a crystal orientation deviation of 30'. Using HNO 3 / HF=2:1 volume ratio of the prepared solution was etched for 4 seconds to determine the A and B surfaces of the seed crystal, and chamfered the B surface for marking, and the seeding growth surface was selected as the B surface. Then use 50ml of bromine-methanol solution with a volume fraction of 4% to corrode the seed crystal for 3 minutes to remove mechanical damage and dirt on the surface, rinse the seed crystal with methanol after etching, and finally use absolute ethanol to ultrasonically clean...

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Abstract

This invention discloses a method for preparing large-volume cadmium zinc telluride (CZT) single crystal. The method comprises: (1) selecting high-melting-point CZT single crystal as the seed crystal; (2) coating a carbon film on the inner side of a quartz ampoule, placing CZT seed crystal in the seed crystal bag at the bottom of the ampoule so that the seeding growth surface of CZT seed crystal is upward, then adding low-melting-point CZT polycrystal, vacuumizing the quartz ampoule, and sealing by welding; (3) placing the quartz ampoule into an ACRT-B type crystal growth apparatus, heating the temperatures of the high-temperature zone and the low-temperature zone to 1135-1145 deg.C and 1030-1040 deg.C within 18-20 h, overheating for 12-16h, and descending the supporting bar at a speed of 0.8 mm / h for 200-240 h; (4) cooling the high-temperature zone and the low-temperature zone to 870-890 deg. within 5-6 h, annealing the crystal ingot in situ for 144-168 h, then slowly cooling to 550-560 deg.C at a rate of 5 deg.C / h, shutting off the power source, and cooling to room temperature. The method can obtain large-volume CZT single crystal, and increase the single crystal ratio in the crystal ingot.

Description

technical field [0001] The invention relates to a method for preparing large-volume cadmium zinc telluride (Cd 1-x Zn x Te, hereinafter referred to as CZT) single crystal method when the x value is not specified. Background technique [0002] With Hg 1-x CD x Research progress of Te long line array and massive focal plane array infrared detectors, in order to satisfy epitaxial growth of Hg 1-x CD x The needs of Te require the preparation of large-volume Cd with uniform composition, high infrared transmittance, and low dislocation density. 0.96 Zn 0.04 Te single crystal. On the other hand, in order to prepare multiple large-volume parallel CZT detectors with high detection efficiency, as well as surface element array detectors for imaging systems, for large-volume Cd with high resistivity, low defect density, and low cost 0.9 Zn 0.1 The demand for Te single crystal is also increasing. [0003] In order to prepare large-volume CZT single crystals, the solution is to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B11/14
Inventor 介万奇徐亚东王涛华慧刘伟华
Owner IMDETEK
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