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Memory element and memory

A storage element and storage layer technology, applied in static memory, digital memory information, information storage, etc., to achieve the effect of reducing power consumption, reducing total power consumption, and reducing the amount of writing current

Inactive Publication Date: 2011-12-07
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it may be sufficient to allow a current necessary for performing a write operation to flow into the write wiring

Method used

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Embodiment Construction

[0078] Before describing specific embodiments of the present invention, an outline of the present invention will be described first.

[0079] In an embodiment of the present invention, information is recorded by reversing the magnetization direction of the storage layer of the storage element by the aforementioned spin injection. The storage layer is formed of a magnetic material such as a ferromagnetic layer and holds information based on the magnetization state (magnetization direction) of the magnetic material.

[0080] In the basic operation of reversing the magnetization direction of the magnetic layer by spin injection, a current having a certain threshold (Ic) or higher is caused to flow in a direction perpendicular to the film surface of the memory element from the giant In memory elements formed by magnetoresistive elements (GMR elements) or magnetic tunnel junction elements (MTJ elements). Here, the polarity (direction) of the current depends on the magnetization di...

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Abstract

A memory element is provided. The memory element includes a memory layer that retains information based on a magnetization state of a magnetic material, in which a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer, and a fine oxide is dispersed in an entire or part of a ferromagnetic layer forming the memory layer.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP 2006-113538 filed in the Japan Patent Office on Apr. 17, 2006, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a memory element including a memory layer storing the magnetization state of a ferromagnetic layer as information, and a magnetization fixed layer whose magnetization direction is fixed. More specifically, the present invention relates to a memory element in which spin-polarized electrons are injected by enabling current to flow in a direction perpendicular to the film surface to change the magnetization direction of the memory layer; A memory including storage elements suitable for use in non-volatile memory. Background technique [0004] High-speed and high-density DRAMs have been widely used as random access memories in information equipment such...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L27/22G11C11/16H01F10/32
CPCH01L27/228H01F10/3272G11C11/16H01F10/3254B82Y25/00H01L43/08H01F41/309H01F10/329H10B61/22H10N50/10H01L27/105
Inventor 细见政功大森广之山元哲也肥后丰山根一阳大石雄纪鹿野博司
Owner SONY CORP
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