Semiconductor structure of liquid crystal display and producing method thereof

Abstract

This invention relates to a manufacturing method for a semiconductor structure, which first of all forms a semiconductor layer in the active element region and the capacitor-storage region on the base plate, forms a first interlayer dielectric layer to cover the semiconductor layer, forms a grid and a first electrode on the first interlayer dielectric layer above the active region and the capacitor-storage region to take the first interlayer dielectric layer under the grid as the grid dielectric layer to dope it to form a source and a drain in the semiconductor layer of the active region, forms a second interlayer to cover the grid and the first electrode and forms a patternized conduction layer as the pixel electrode on it to be covered by a patternized third interlayer dielectric layer and forms multiple contact windows in the first, second and third dielectric layers to expose the source, drain, part of the conduction layer and the first electrode, forms a second electrode on the third dielectric layer to be connected to the first electrode and the source / drain are connected with the semiconductor layer and the patternized conduction layer by leads.

Description

technical field [0001] The present invention relates to a semiconductor structure and a manufacturing method thereof, and in particular to a semiconductor structure with a multi-layer storage capacitor (multi-layer storage capacitor), a pixel structure and a manufacturing method thereof Background technique [0002] A thin film transistor (Thin Film Transistor, TFT) is a driving element applied to a display. Among them, a low temperature polysilicon (Low Temperature Poly-Silicon, LTPS) thin film transistor is a device different from the traditional amorphous silicon thin film transistor. Because the electron mobility of low-temperature polysilicon thin film transistors can reach 200cm 2 / V-sec or more, so thin film transistors with smaller sizes can be produced, and the aperture ratio can be increased. Thus, the brightness of the display can be improved and power consumption can be reduced. In addition, in the process of fabricating the thin film transistor, a storage cap...

AI Technical Summary

Problems solved by technology

Please refer to FIG. 1B again. During the doping process 150, the polysilicon layer 124 located in the storage capacitor region 114 of the substrate 110 is covered by the first electrode 144, and the polysilicon layer 124 cannot be doped, which will make the storage capacitor The storage capacitor of 195 cannot effectively improve the

Therefore, the display effect of the display using the above-mentioned pixel structure 100 is also relatively poor.

Images