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Leadless PTC thermistor material with high Curie point

A thermistor and high Curie point technology, applied in the direction of resistors with positive temperature coefficients, inorganic insulators, ceramics, etc., can solve the problems of inability to realize semi-conductivity, improve the bonding force or grain boundary performance, and improve the performance of ceramics. performance, stability improvements

Inactive Publication Date: 2007-08-08
杨敬义 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if this traditional excess titanium method is introduced into the lead-free high Curie point PTC formulation process of sodium bismuth titanate, it is almost impossible to achieve semiconducting

Method used

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  • Leadless PTC thermistor material with high Curie point
  • Leadless PTC thermistor material with high Curie point
  • Leadless PTC thermistor material with high Curie point

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: As shown in Figure 1, the fixed semiconducting element of the resistance material in this example is Y, the addition amount is 0.4mol%, the additives are BaO 2mol%, MnO 2 0.02mol%, the raw materials weighed according to the production steps are: Y 2 O 3 0.450 g; BaCO 3 3.950 g; MnO 2 0.017 g; and then respectively with the pre-synthesized (Na 1 / 2 Bi 1 / 2 )TiO 3 2.12g, 4.24g, 10.59g, 21.19g, 31.78g; BaTiO 3 230.87g, 228.54g, 221.54g, 209.88g, 198.22g form a total of 5 groups of mixtures, ball-milled with deionized water for 24h, filtered, and dried at 100 °C to obtain powder materials, artificially granulated, and under 1.0 ton pressure The formed green body, the forming size is φ12×2.2mm, is sintered in a box furnace. During sintering, the furnace temperature is controlled first from room temperature to 600°C at a heating rate of 150°C / h, kept for 1h, and then at 250°C / h. The heating rate was increased to 1300 °C, kept for 1 h, and then the furnac...

Embodiment 2

[0037] Example 2: The resistance material in this example is used to study the performance change of the sample by changing the amount of semiconducting elements added, and the pre-synthesized (Na1 / 2 Bi 1 / 2 )TiO 3 10mol%, BaTiO 3 90mol%, additive BaO 2mol%, MnO 2 0.02mol%, the raw material taken according to the production steps is: (Na 1 / 2 Bi 1 / 2 )TiO 3 21.19 g; BaTiO 3 209.88 g; BaCO 3 3.950 g; MnO 2 0.017 g; then separately with Y 2 O 3 0.055g, 0.115g, 0.225g, 0.450g, 0.660g to form a total of 5 groups of mixtures, ball milled with deionized water for 24h, filtered, and dried at 100 °C to obtain powder materials, artificially granulated, at a pressure of 1.0 tons The lower-formed green body, with a forming size of φ12×2.2mm, is sintered in a box furnace. During sintering, the furnace temperature is firstly grown from room temperature to 600°C at a heating rate of 150°C / h, kept for 1 hour, and then heated at 250°C / h. The heating rate of h was raised to 1300 ...

Embodiment 3

[0038] Example 3: The resistive material in this example was used to study the effect of changes in the types of semiconducting elements on the properties of the samples. Fix the pre-synthesized (Na 1 / 2 Bi 1 / 2 )TiO 3 10mol%, BaTiO 3 90mol%, additive BaO 2mol%, MnO 2 0.02mol%, the raw materials weighed according to the production steps are: BaCO 3 3.950 g; MnO 2 0.017 g; (Na 1 / 2 Bi 1 / 2 )TiO 3 21.19 g; BaTiO 3 209.88 g; then separately with the semiconducting element Y 2 O 3 0.450 g; La 2 O 3 0.650 g; Sb 2 O 3 0.580 g; Nb 2 O 5 0.530 g; Ta 2 O 5 A total of 5 groups of 0.88 g mixtures were formed, ball milled with deionized water as the medium for 24 hours, filtered, dried at 100 °C, artificially granulated, and formed into a green body under a pressure of 1.0 ton. The formed size was φ12 × 2.2 mm. Sintering in the furnace, control the furnace temperature from room temperature to 600 °C at a heating rate of 150 °C / h, hold for 1 hour, and then grow to ...

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Abstract

The invention relates to one semi-conductor materials to realize semi-conductive process meeting the high Curie piezoelectricity ceramics materials without lead, which comprises the following parts: (Na1 / 2Bi1 / 2)x(Ba1-x-y+z)TiO3+yM1+zM2O+0.02MnO2mol%, wherein, x=0.01-0.15; y=0.001-0.006; z=0.005-0.05; M1=0.0001-0.006; M2=0.005-0.05; Formula comprises micro semi-conductive element and additive components.

Description

technical field [0001] The invention relates to a semiconductor material, in particular to a lead-free high Curie point PTC thermistor material which conforms to the lead-free high Curie point piezoelectric ceramic material to realize semiconductorization and prepares the lead-free high Curie point PTC thermistor. Background technique [0002] PTCR is a positive temperature coefficient thermistor with automatic temperature control effect. It integrates heating and temperature control functions. It has temperature sensing and overcurrent protection functions. It has self-recovery, long life, simple structure, and energy saving. , no fire, safety and reliability and a series of outstanding advantages are favored, widely used in industrial and civil electronic equipment, and household appliances and other fields. At present, the thermistor materials used in the production of thermistors at home and abroad are all replacing BaTiO with lead elements. 3 The barium element in the ...

Claims

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Application Information

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IPC IPC(8): H01C7/02C04B35/00H01B1/08H01B3/12
Inventor 杨敬义刘青
Owner 杨敬义
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