Process of preparing anatase crystal phase titanium dioxide film at low temp.

A technology of titanium dioxide and anatase, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of titanium dioxide film grain growth and reduce film photoactivity

Inactive Publication Date: 2007-07-18
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, at a higher substrate temperature, it is easy to cause the grains in the titanium dioxide fi

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 60 mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 4 sccm respectively, and the total pressur...

Embodiment 2

[0018] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 80mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 6 sccm respectively, and the total pressure...

Embodiment 3

[0021] Substrates used to prepare thin films were ultrasonically cleaned in acetone and absolute ethanol solutions for 15 minutes, then rinsed with deionized water, and dried for later use. A titanium target with a purity of 99.9% is fixed on the magnetron cathode target holder, and the substrate for preparing a thin film to be processed after cleaning and drying is fixed on the sample base of the vacuum chamber of the magnetron sputtering system. The magnetic field strength in the sputtering area on the target surface is about 2800 Gauss, and the distance from the target surface to the substrate is 110 mm. Bake the vacuum chamber before preparation, and wait for the background vacuum to 1×10 -4 After Pa, argon gas was introduced to 1Pa, and then the target was cleaned by DC glow sputtering. After the titanium target is cleaned by sputtering, oxygen is introduced. At this time, the flows of argon and oxygen are adjusted to 30 sccm and 3 sccm respectively, and the total pressu...

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Abstract

The present invention is low temperature process of preparing anatse type crystalline titania film, and belongs to the field of wide-gap semiconductor photocatalyzing technology. Titania film is deposited on the substrate through reactive magnetically controlled sputtering, and the deposition process has the base with the substrate cooled by a water cooling system, argon flow rate of 30 sccm, the flow rate between argon and nitrogen of 5-10, total gas pressure of 1-4 Pa, power density of 1.4-2.8 W/sq cm, negative voltage applied on the base of 20V-100, and base temperature always lower than 80 deg.c. During the film depositing process, great amount of positive argon ion is driven by the base bias voltage to bombard the deposited titania film so as to form anatse type crystalline titania film on the heat labile substrate.

Description

technical field [0001] The invention relates to a preparation method in the technical field of metal oxide materials, in particular to a method for preparing an anatase crystal phase titanium dioxide film at low temperature. It can be used in the field of wide bandgap semiconductor photocatalysis. Background technique [0002] Titanium dioxide is a metal oxide material that has received widespread attention. It has three different crystal phase structures in nature: anatase crystal phase (tetragonal crystal), rutile crystal phase (tetragonal crystal) and brookite crystal phase (tetragonal crystal). orthorhombic crystal form). In recent years, more and more studies have shown that titanium dioxide materials with rutile and anatase crystal phase structures have significant photocatalytic and photo-induced hydrophilic properties (which can be collectively referred to as photo-induced activity), and many practical and potential ones have been derived from this. Application fie...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 钟晓霞周威束奇伟夏宇兴
Owner SHANGHAI JIAO TONG UNIV
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