Micro-drive structure for implementing coplane and off-plane movement
A technology of micro-drive and motion, applied in the direction of micro-structure technology, micro-structure devices, manufacturing micro-structure devices, etc., can solve the problem of limited device performance and application fields, difficult co-planar and out-of-plane motion, single co-planar drive structure or Problems such as out-of-plane movement can be achieved to achieve mass production, reduce internal stress, and improve quality
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Embodiment 1
[0041] Embodiment 1: When making a micro-drive structure of a single-ended unequal-height support beam, the following processes are mainly adopted:
[0042] 1. The starting material is double-throwing N-type (100) silicon wafer 11 (such as Figure 6a shown), the thickness is 400±10 microns;
[0043] 2. Form a silicon oxide mask 12 on the silicon wafer 11, and then etch a deep groove 13. The depth of the deep groove 13 determines the gap between the fixed electrode 3 and the movable electrode 5 on the glass substrate;
[0044] 3. If Figure 6b As shown, the silicon oxide mask 12 is removed, and the surface of the silicon wafer 11 is doped with boron 14 by ion implantation or diffusion process to form an ohmic contact;
[0045] 4. If Figure 6c Shown, make metal electrode 15 on glass substrate 8, as the lead electrode of micro-drive structure;
[0046] 5. If Figure 6d As shown, the glass substrate 8 and the silicon wafer 11 are anodically bonded, and the silicon wafer 11 i...
Embodiment 2
[0049] Embodiment 2: When making the micro-drive structure of the double-end unequal height support beam, the following processes are mainly used:
[0050] 1. The starting material is double-throwing N-type (100) silicon wafer 11 (such as Figure 6a shown), the thickness is 400±10 microns;
[0051] 2. At first, silicon oxide mask 19 is formed on silicon wafer 11, and then photoresist mask 20 is formed on silicon oxide mask 19 surface (such as Figure 7a shown), and then form a composite mask of silicon oxide and photoresist; then use photoresist 20 as a mask to etch deep grooves 21 (such as Figure 7b shown), the depth of the deep groove 21 determines the lower end height difference between the combined torsion beam 7 and the folded beam 6 (comprising 71, 72, 73 etc. beams) (as Figure 7c shown);
[0052] 3. Remove the photoresist mask 20, and use the silicon oxide mask 19 as a mask to etch the silicon wafer 11 to form a deep groove 22. The depth of the deep groove 22 deter...
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