Low dielectric constant and low temperature sintering microwave ceramic medium and its preparing process

Abstract

The invention discloses a low-dielectric constant low-temperature sintered microwave dielectric ceramic. The ceramic material is composed of [(Zn1-xMgx)O-ySiO2+awt%TiO2]+bwt%[zLi2O-(1-z)B2O3], wherein: 0≤x≤1, 0.5≤y≤1, 0≤a≤20, 0<b≤15, 0<z<1; the invention also discloses a preparation method of the porcelain material. The invention adopts Li2O-B2O3 composition, which can promote the sintering temperature of (Zn1-xMgx)O-ySiO2 ceramics from 1200°C to below 960°C; it has good microwave dielectric properties: the dielectric constant is 6-10, and the quality factor Qf> 12000GHz, frequency temperature coefficient can be adjusted according to needs. The material of the invention has low usage cost, stable process and good reproducibility, can be used in the design and production of multi-layer frequency devices such as multi-layer dielectric antennas, baluns, and various filters, and has great industrial value.

Description

technical field [0001] The invention relates to a low-permittivity low-temperature sintered microwave dielectric ceramic applied to chip-type multilayer microwave components and a preparation method thereof, belonging to the technical field of material science. Background technique [0002] In order to meet the integration and miniaturization requirements of modern communication equipment, microwave dielectric devices, as one of the main components, are also in urgent need of miniaturization and light weight. An important way to achieve this goal is to use multilayer integrated circuit technology (MLIC for short). In the design of multilayer chip microwave components, in order to reduce its manufacturing cost, Cu or Ag with high conductivity is generally used as the internal electrode, and the melting points of Cu and Ag are 1064 ° C and 961 ° C, respectively. Therefore, it is necessary to develop Ag or Cu co-fired low-temperature sintered microwave dielectric ceramics. Cu...

AI Technical Summary

Problems solved by technology

In order to reduce the sintering temperature of this ceramic system, the inventor published "A New system ofLow Temperature Sintering ZnO-SiO" in "Japanese Journal of Applied physics" 2006, 45 volumes 5A period 4143-4145 pages 2 Dielectric Ceramics" published in Li 2 CO 3 -Bi 2 o 3 As an additive to reduce ZnO-SiO 2 Technical scheme of ceramic sintering temperature, 5wt% Li 2 CO 3 -4wt% Bi 2 o 3 can make ZnO-SiO 2 The ceramic sintering temperature drops to 910°C, and its dielectric properties are: ε r 6.65, the quality factor Qf value is 33,000GHz, the frequency temperature coefficient τ f -70×10 -6 / °C. The main defect of this study is that the temperature coefficient of frequency is too large to meet the requirements of device stability for low τ f Require

To adjust doping Li 2 CO 3 -Bi 2 o 3 Low temperature sintered ZnO-SiO 2 ceramic tau f , the inventor chose TiO 2 as τ f Regulator, research found: TiO 2 Will be with Li 2 CO 3 -Bi 2 o 3 Bi in 2 o 3 A reaction occurs to form a compound, TiO 2 Can't adjust τ f At the same time, the sintering temperature is greatly increased (sintering temperature 1050°C)