Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-temperature sintering hexagonal crystal series soft magnet ferrite

A soft ferrite and hexagonal ferrite technology, applied in the field of metal materials, can solve problems such as affecting the sintering effect and reducing the performance of components, and achieve the effects of high material performance indicators, wide firing temperature and wide application prospects.

Inactive Publication Date: 2009-08-26
UNIV OF SCI & TECH BEIJING
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mixing of sintering aid and ferrite requires secondary mixing, which will introduce more impurities; it is also difficult to mix the main material and sintering aid very uniformly, which affects the sintering effect; and the sintering aid is enriched at the grain boundary , which may promote the diffusion of Ag along the grain boundary and reduce the performance of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-temperature sintering hexagonal crystal series soft magnet ferrite
  • Low-temperature sintering hexagonal crystal series soft magnet ferrite
  • Low-temperature sintering hexagonal crystal series soft magnet ferrite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1, using analytically pure Fe 2 O 3 , BaCO 3 , Bi 2 O 3 , CuO, Co 3 O 4 , ZnO, MgO, MnO 2 , NiO, TiO 2 As the initial raw materials, weigh the raw materials according to the component ratio (weight ratio) shown in Table 1. Use absolute ethanol as the medium to ball mill and mix for 24 hours, dry at 75°C, pass through a 200-mesh sieve, and pre-burn for 4 hours; ball mill the resulting powder Sieving, granulating, forming, and sintering at 890°C for 4 hours. Ring sample, outer diameter 20mm, inner diameter 10mm, thickness 2.5mm, molding pressure 7MPa; sheet sample, diameter 10mm, thickness 1mm, molding pressure 2MPa. The upper and lower surfaces of the sintered flake samples were coated with silver and their dielectric constant and resistivity were measured. After firing, the ring-shaped sample was measured with a HP4291B (1M-1GHz) RF impedance analyzer to measure the magnetic spectrum. The performance parameters of the obtained samples are shown in Table 1.

Embodiment 2

[0013] Example 2, using analytically pure Fe 2 O 3 , BaCO 3 , Bi 2 O 3 , CuO, Co 3 O 4 , ZnO is the initial raw material, and Fe is based on the weight ratio 2 O 3 : BaCO 3 : Bi 2 O 3 : CuO: Co 3 O 4 :ZnO=100:37.7:4.9:3.4:8.5:6.9 Weigh the raw materials, mix them by ball milling with absolute ethanol for 24 hours, dry at 75°C, pass through a 200-mesh sieve, pre-burn at 900°C, and keep the temperature for 4 hours to obtain Pure single-phase Y-type hexagonal ferrite powder; ball milled, sieved, granulated, molded, and sintered at 850℃, 870℃, 890℃, and 910℃ for 2 hours (denoted as samples 2-1, 2- 2, 2-3 and 2-4). Ring sample, outer diameter 20mm, inner diameter 10mm, thickness 2.5mm, molding pressure 7MPa; sheet sample, diameter 10mm, thickness 1mm, molding pressure 2MPa. The upper and lower surfaces of the sintered flake samples were coated with silver and their dielectric constant and resistivity were measured. After firing, the ring-shaped sample was measured with a HP4291B (1M-1G...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the metal material field, in particular to a hexagonal soft magnetic ferrite material that can be sintered at a low temperature directly. The invention is characterized in that the invention adopts Bi2O3 as one of the constituent, and replaces Ba2+ with Bi3+, and divalent metal Me2+ with Fe3+ to balance the overall electricity price. The crystal phase of the hexagonal soft magnetic ferrite material is Y-type hexagonal ferrite, and the molecular formula is Ba2-xBixMe2+xFe12-xO22, 0 H01F 1 / 34 C04B 35 / 26 C04B 35 / 64 1 4 1 2007 / 6 / 14 101106004 2008 / 1 / 16 000000000 University of Science and Technology Beijing Beijing 100083 Bai Yang Qiao Lijie Xu Fang luzhong qiang 11207 The Patent Agency of Beijing University of Science and Technology No.30 Xueyuan Road, Beijing 100083

Description

Technical field: [0001] The invention belongs to the field of metal materials, and particularly relates to a hexagonal soft ferrite material that can be directly sintered at low temperature. Background technique: [0002] As one of the three major passive chip components, chip inductors are widely used in various electronic devices. In recent years, with the rapid development of mobile communication technology and electronic products such as electronic computers, the application frequency of electronic products has become higher and higher, which has exceeded GHz, which requires the application frequency of various electronic components to be increased accordingly. At present, chip inductors use NiZnCu ferrite as the magnetic medium, but NiZnCu ferrite is limited by its cubic crystal structure, and the cut-off frequency is only about 100MHz, which cannot be used in even / ultra-high frequency bands. Hexagonal soft ferrite (Y-type, Z-type, W-type, M-type, X-type, U-type), due to its...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/34C04B35/26C04B35/64
Inventor 白洋乔利杰徐芳
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products