Making technology method for flash memory
A manufacturing process and flash memory technology, which is applied in the field of semiconductor integrated circuit technology, achieves the effects of small impact, improved rewritable performance, and beneficial to subsequent processes
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[0015] The main process steps that the present invention adopts are as follows: 1. isolation region / active area forms (same as existing technology); 2. high-voltage transistor, memory cell well implantation (same as existing technology); 3. floating gate oxidation (same as existing technology); with craftsmanship, ); 4. floating gate polycrystalline deposition (with existing technology, ); 5. A thin layer of oxide film is grown on the surface of the floating gate for about 6. Silicon nitride deposition; 7. Partial oxidation of the floating gate (same as the existing process); 8. Etching of the floating gate (same as the existing process); 9. The subsequent steps are also the same as the existing process.
[0016] The present invention compares with existing technology: steps 1~4 are the same as existing technology, after floating gate is oxidized, deposit a layer of polysilicon on the surface; Then add a process procedure, promptly grow a layer on the surface of polysilico...
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