Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for preparing nano semiconductor particles reinforced silk fiber base composite material

A nano-semiconductor, silk fiber technology, applied in fiber processing, animal fibers, textiles and papermaking, etc., can solve problems such as restricting popularization and application, and achieve the effect of solving complex processes, saving raw materials and costs, and good stability

Inactive Publication Date: 2009-05-20
SHANGHAI JIAO TONG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the product produced by this technology is a solid-phase material that is easy to apply, the introduction of toxic and pungent hydrogen sulfide gas into the process restricts the popularization and application of this technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Select 0.1 g of silkworm precursor silk as a biological material, place it in 40 mL of 0.5% sodium carbonate aqueous solution for hydrothermal degumming treatment, the treatment temperature is 110 ° C, and the treatment time is 1 hour, then take it out with deionized water Fully rinse to remove the sodium salt on the surface, dry and store in vacuum to obtain degummed silk fiber. Immerse the degummed silk fiber in the prepared 0.1mol / L cadmium chloride solution and soak for 120 hours, take it out and fully rinse it with deionized water, and then put it into the prepared 0.2mol / L sodium sulfide soaking solution for 48 hours, Remove and rinse thoroughly with deionized water. The nano-semiconductor particle-reinforced silk fiber-based composite material can be obtained by vacuum drying, in which the cadmium sulfide nanoparticles are spherical or ellipsoidal, with an average particle size of about 6.5nm, uniformly dispersed on the surface of the silk fiber, and its fluoresc...

Embodiment 2

[0020] Select 0.5 g of silkworm precursor silk as a biological material, place it in 200 mL of 0.5% sodium hydroxide aqueous solution for hydrothermal degumming treatment, the treatment temperature is 110 ° C, and the treatment time is 1.5 hours, then take it out with deionization Fully rinsed with water to remove the sodium salt on the surface, dried and stored in vacuum to obtain degummed silk fibers. Immerse the degummed silk fiber in the prepared 0.1mol / L cadmium chloride solution and soak for 100 hours, take it out and fully rinse it with deionized water, and then put it into the prepared 0.1mol / L sodium sulfide soaking solution for 12 hours, Remove and rinse thoroughly with deionized water. The nano-semiconductor particle-reinforced silk fiber-based composite material can be obtained by vacuum drying, in which the cadmium sulfide nanoparticles are regular spherical, with an average particle size of about 5nm, uniformly dispersed on the surface of the silk fiber, and the ...

Embodiment 3

[0022] Select 0.1 g of silkworm precursor silk as a biological material, place it in 40 mL of 1% sodium carbonate aqueous solution to carry out hydrothermal degumming treatment, the treatment temperature is 100 ° C, and the treatment time is 1.5 hours, then take it out with deionized water Rinse fully to remove the sodium salt on the surface, dry and store in vacuum to obtain degummed silk fibers. Immerse the degummed silk fiber in the prepared 0.5mol / L cadmium chloride solution and soak for 120 hours, take it out and fully rinse it with deionized water, and then put it into the prepared 0.1mol / L sodium sulfide soaking solution for 1 hour, Remove and rinse thoroughly with deionized water. The nano-semiconductor particle reinforced silk fiber-based composite material can be obtained by vacuum drying, in which the cadmium sulfide nanoparticles are monodisperse quantum dots with irregular shapes, and the particle diameter is mostly below 4nm. Characteristic fluorescence peaks of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing nanometer semi-conductive particle strengthen silk fiber-base composite material, wherein, the invention uses natural silk fiber as base material, immerges fiber in metal salt solution and sulfur solution, via adjusting the solution density and reaction time, controls the shape, size and distribution of semi-conductive nanometer particles, to obtain the final composite material. The inventive composite material has wide application in optical chemical catalysis, photoluminescence, biological check and mark. Via the organic combination between natural silk fiber and nanometer semi-conductive strengthen material, the inventive composite material can be recycled and utilized easily, to avoid second pollution and save cost.

Description

technical field [0001] The invention relates to a method for preparing a nano-semiconductor particle-reinforced silk fiber-based composite material. Specifically, silk is used as a matrix material to control the uniform formation of sulfide nanoparticles on the silk fiber, and finally obtain an inorganic-silk fiber reinforced by nano-semiconductor particles. The organic functional composite material belongs to the technical field of advanced composite materials. Background technique [0002] Nano-sulfide semiconductor materials have many special properties different from those of bulk materials, such as fluorescence, nonlinear optics, chemical activity, photoelectric catalysis, and photoelectric conversion. They are used in national defense, electronics, chemical industry, nuclear technology, metallurgy, aviation, medicine, etc domain has many potential applications. However, these nanostructured sulfides have high specific surface area, active surface, easy to agglomerate ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): D06M11/13D06M13/188D06M11/38D06M11/76D06M11/55D06M101/12
Inventor 苏慧兰韩婕张荻
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com