Temp regulator of semiconductor substrate

Abstract

The purpose of this invention is to provide the heat conducting plate of a temperature adjusting apparatus rapidly cooling a semiconductor substrate without generating warpage in the semiconductor substrate during heating/cooling. Sucking holes connected to a vacuum source for sucking a silicon wafer are provided near proximity gaps in the heat conducting plate of the temperature adjusting apparatus for heating or cooling the silicon wafer. When the vacuum source performs sucking through the sucking holes, the silicon wafer is sucked to the heat conducting plate with a small gap being interposed between them, so that the warpage accompanying rapid heating/cooling is suppressed, and the wafer is uniformly cooled for a short period time.

Description

technical field [0001] The present invention relates to a temperature regulating device for a semiconductor substrate, and more particularly to a temperature regulating device having a heat transfer plate for heating and cooling a semiconductor substrate. Background technique [0002] Conventionally, temperature control devices for heating and cooling semiconductor substrates to predetermined temperatures have been widely used. [0003] This temperature adjustment device is composed of a heat transfer plate made of aluminum or copper-based materials with excellent heat transfer properties on which a semiconductor substrate is placed, and a heat source part in which a Peltier element or the like is incorporated (for example, refer to: Japanese Patent Application Laid-Open No. 2000 -306984). [0004] However, in recent years, in order to manufacture semiconductors cheaply, the diameter of the semiconductor substrate from which the semiconductor wafer is cut has been made as l...

AI Technical Summary

Problems solved by technology

As one of the measures, it is considered to reduce the gap forming parts when placing a high-temperature semiconductor substrate on the heat transfer plate of the temperature adjustment device whose temperature is adjusted to a predetermined temperature. However, in this case, due to the high cooling rate, the The resulting temperature change rate in the thickness direction of the substrate is different, therefore, a large temperature difference is generated between the lower surface and the upper surface of the semiconductor substrate, so warpage occurs on the substrate, and due to this warpage, there is a reduction in the uniformity of the temperature distribution , the problem that the cooling of the semiconductor substrate becomes slower

In particular, such warping is particularly noticeable on large-diameter semiconductor substrates, and has become a major problem in recent manufacturing processes that increase the diameter of semiconductor substrates.

[0005] In addition, when the semiconductor substrate becomes larger as described above, and the gap between the heat transfer plate on which it is placed becomes smaller, when the semiconductor substrate is placed on the heat transfer plate, the air between the substrate and the heat transfer plate cannot escape smoothly. As a result, there will be a problem that the semiconductor substrate placed on the heat transfer plate will be misaligned by rotation or lateral sliding, and measures must be taken for this problem.

Images