Decoupling reactive ion etching chamber containing multiple processing platforms

Abstract

The invention is used for isolating the plasma and RF. In the invention, each handling area at least has two RF frequencies feeding in its cathode; wherein, one RF frequency is at least two times higher than the other one so as to provide the decoupling reactive ion etching capability; the room body of the handling room is grounded. By the frequency isolation, the multi RF frequencies fed-in from cathode is not able to bring RF cross talk and fluctuation. The invention also uses a plasma restraint device to avoid the cross talk of plasma. A grounded shared exhaust passage is attached to the vacuum pump.

Description

【Technical field】 [0001] The present invention relates to a plasma processing chamber, in particular to a plasma processing chamber with one pair or more parallel processing regions, which can process two or more substrates individually or simultaneously. 【Background technique】 [0002] During the fabrication of semiconductor chips, two types of semiconductor chip processing systems are generally used. The first type of system is often referred to as a batch processing (batch processing) system. The main reason for using a batch system is that multiple chips or substrates can be processed simultaneously, thus the system can provide high output throughput. However, as semiconductor device performance specifications have become increasingly stringent, the industry has turned to a second type of chamber, ie, a single substrate chamber. The main reason for developing a single substrate processing system is that it is easier to control the process characteristics of the substra...

AI Technical Summary

Problems solved by technology

In particular, the '681 patent explains that the inadequacy of the Mattson system (the subject of the aforementioned '022 patent) is limited by the localized processing of multiple substrates in multiple stations within a single chamber. directly caused by

This increases the complexity of the structure and configuration of the processing chamber

Finally, the aforementioned methods of generating plasma in parallel processing chambers do not ensure meeting the stringent performance specifications required for the fabrication of advanced semiconductor devices

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