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Oxide giant magnet resistor spin valve, preparing process and its use

A giant magnetoresistance and oxide technology, applied in the field of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, magnetic recording heads, etc., can solve the problems of high working magnetic field and low operating temperature, and achieve low saturation field and low resistivity The effect of reducing and high magnetic field sensitivity

Inactive Publication Date: 2008-02-13
GRIREM ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to solve the shortcomings of the existing oxide giant magnetoresistance materials, such as low service temperature and high working magnetic field, and provide a multilayer film structure of oxide giant magnetoresistance materials and its preparation process

Method used

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Embodiment 1

[0014] In this embodiment, the magnetron sputtering method is used to sequentially deposit Pr on the single crystal silicon 0.5 Sr 0.5 MnO 3 , La 0.7 Sr 0.3 MnO 3 , SrTiO 3 , La 0.7 Sr 0.3 MnO 3 , the thickness is 100nm, 100nm, 5nm, 200nm in turn. The MR value of the material is higher than that of the monolayer La 0.7 Sr 0.3 MnO 3 Improve by at least 200%.

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Abstract

This invention relates to an oxide huge magnet self rotating valve, its preparation method and usage, among which, the self rotating valve is composed of four layer films: an anti-ferromagnetic layer, a nailing layer, a separation layer and a free layer, oxide for each. The preparation technology is sputtered method or sol-gel method or pulse-laser deposition method, the resistivity of the invented valve is reduced obviously having the advantage of low saturation field, high field sensitibity.

Description

[0001] The invention belongs to the technical fields of material manufacturing, sensing and magnetic storage, and relates to an oxide giant magnetoresistance spin valve, a preparation method and an application thereof. Background of the invention [0002] Since the giant magnetoresistance GMR (giant magnetoresistance) effect was discovered in Fe / Cr multilayer film in 1988, due to its application in the fields of magnetic read head and magnetic random access memory, it has become an important part of magnetism, magnetoelectronics, magnetic recording and so on. Research hotspots in the field of materials and other new functional materials. [0003] In 1993, Helmolt et al. found a new way, in La 2 / 3 Ba 1 / 3 MnO 3 The GMR effect is observed in the film, and the GMR effect is extended to the perovskite rare earth manganese oxide film while studying the metal and alloy multilayer film. In 1995, Xiong Guangcheng and others found that the perovskite manganese oxide Nd-Sr-Mn-O had a ...

Claims

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Application Information

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IPC IPC(8): G11B5/39H01L43/08G11C11/15G01R33/00H01L43/12
Inventor 于敦波严辉张深根朱满康颜世宏杨红川王波徐静应启明张国成
Owner GRIREM ADVANCED MATERIALS CO LTD
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