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Semiconductor device and its lead frame

A semiconductor and lead technology, applied in the direction of semiconductor devices, circuit devices, semiconductor/solid-state device components, etc., can solve the problem of not being able to reduce the installation area of ​​semiconductor devices

Inactive Publication Date: 2008-01-02
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this bending process, the length of the self-encapsulating resin 107 in the ground wire 104 and the wire 105 is set to 2mm-15mm, so the length of the ground wire 104 and the wire 105 cannot be short, so there is a problem that the size of the semiconductor device cannot be reduced. area problem

Method used

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  • Semiconductor device and its lead frame
  • Semiconductor device and its lead frame
  • Semiconductor device and its lead frame

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Hereinafter, Embodiment 1 will be described with reference to the drawings.

[0061] FIG. 1 is a semiconductor device according to Embodiment 1 of the present invention. Wherein, Fig. 1 (a) shows the structure front view of semiconductor device; Fig. 1 (b) shows the I-I line structure sectional view of Fig. 1 (a); Fig. 1 (c) shows that this semiconductor device is installed on the side such as substrate bottom view of the structure. As shown in Figure 1 (a), this semiconductor device has a semiconductor chip 11 forming a semiconductor element of a high-frequency integrated circuit, a square chip base 12 mounted on the semiconductor chip 11, and each inner end portion is aligned with the short side of the chip base 12. The first leads 14 formed by connecting the side ends, and a pair of second leads 15 respectively extending outside each end sandwich the chip base with intervals. Here, the mounting surface of the semiconductor chip 11 of the die pad 12 is formed by sel...

Embodiment 2

[0084] Hereinafter, Embodiment 2 of the present invention will be described with reference to the accompanying drawings.

[0085] FIG. 2 shows the structure of a semiconductor device according to Embodiment 2 of the present invention. Wherein, FIG. 2(a) shows the cross-sectional structure of the semiconductor device; FIG. 2(b) only shows the cross-sectional structure of the chip base. FIG. 2( a ) shows the same cross-sectional structure as in FIG. 1( b ), which is connected to a first lead (not shown) and perpendicular to the extending direction of the first lead. In FIG. 2( a ), the same components as those shown in FIG. 1( b ) are denoted by the same reference numerals, and description thereof will be omitted. Thin-layer portions 12a are respectively provided on both sides of the mounting surface of the chip base 12 in this embodiment, and at the same time, on the other thin-layer portion, a thickness of 5% to 100% of the thickness of the semiconductor chip 11 is provided a...

Embodiment 3

[0092] Hereinafter, Embodiment 3 of the present invention will be described with reference to the drawings.

[0093] Fig. 3 shows the structure of the semiconductor device of embodiment 3 of the present invention, wherein Fig. 3 (a) shows the plane structure of the chip base in this semiconductor device; Fig. 3 (b) shows II-II of Fig. 3 (a) The cross-sectional structure of the line. In FIGS. 3( a ) and ( b ), the same components as those shown in FIG. 2( a ) are denoted by the same reference numerals, and description thereof will be omitted. As shown in FIG. 3( a), on the mounting surface of the chip base 12, an inner square shape is formed at the center thereof, extending in a vertical direction to the long side of the chip base 12, and simultaneously forming a concave portion on the mounting surface to prevent the diffusion of the fixing material 12c. ; The first semiconductor chip 11A and the second semiconductor chip 11B are respectively fixed on the chip base with the fi...

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PUM

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Abstract

The semiconductor device of the invention includes: a square die pad, to which a semiconductor chip is adhered via a silver paste member or the like; first leads, the inner end of each of the first leads being formed continuously and integrally with an associated shorter side of the die pad; and a pair of second leads extending in an outer direction, the inner ends of the second leads interposing the die pad therebetween. The inner end of each of the second leads includes a width-increased end portion having a larger width and being formed to be parallel to an associated longer side of the die pad. A through hole is provided in a portion connecting the width-increased end portion to the outer portion of each of the second leads. The semiconductor chip is electrically connected to the second leads via wires and to the die pad via a grounding wire.

Description

technical field [0001] The present invention relates to a semiconductor device for high-frequency power using a surface-mounted resin-encapsulated package and a lead frame thereof. Background technique [0002] Conventionally, high-frequency semiconductor devices were mostly composed of ceramic packages. However, in recent years, in order to achieve cost reduction, plastic packages using encapsulating resin materials are often used. [0003] Next, a method of manufacturing a high-frequency semiconductor device using a conventional plastic packaging frame will be described with reference to the drawings. [0004] FIG. 9(a) shows a planar structure of a bonding step in a conventional high-frequency semiconductor device manufacturing method. As shown in the top view of FIG. 9( a ), a semiconductor chip 101 formed of a high-frequency integrated circuit is fixed with silver paste 103 at the center of a square chip base 102 . If the long-side direction of the chip base is used ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/495H01L23/28H01L23/544H05K1/02H05K3/34
CPCH01L23/49541H01L23/49575H05K3/341H01L23/49551H01L23/49503H01L2924/3011H05K1/0237H01L24/48H01L2224/48465H01L2224/48247H01L2924/14H01L24/49H01L2223/54473H01L2224/48257H01L2224/48091H01L2224/49175H01L2224/73265H01L2924/30107H01L23/544H05K3/3421H01L2924/01039H01L2924/00014H01L2924/181H01L2924/00H01L2224/45099H01L2224/05599H01L2224/85399H01L2224/45015H01L2924/207H01L2924/00012
Inventor 中山雅央多良胜司汤浅勇藤原俊夫村松薰吉田升
Owner PANASONIC CORP
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