Method for manufacturing MEMS device

Abstract

A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application is a Section 371 National Stage Application of International Application No. PCT / CN2011 / 074289, filed on May 19, 2011, which claims priority to Chinese patent application No. 201010607826.6, filed on Dec. 27, 2010, and entitled “Method for Manufacturing MEMS Device”, the entire disclosure of which is incorporated herein by reference.FIELD OF THE DISCLOSURE[0002]The present disclosure relates to semiconductor manufacturing, and more particularly, to a method for manufacturing a MEMS device.BACKGROUND OF THE DISCLOSURE[0003]Micro-Electro-Mechanical Systems (MEMS), which are suitable for integrated production, are micro devices or systems in which micro mechanisms, micro sensors, micro operators, and signal processing and control circuits are gathered as integral structures. MEMS are developed with the evolution of semiconductor integrated circuit precise manufacturing and super-precise mechanical manufacturing. Micro...

AI Technical Summary

Benefits of technology

[0007]Embodiments of the present disclosure provide MEMS device manufacturing methods, which may increase the polishing speed of sacrificial material in the device and avoid over polishing.

[0037]Compared with the current techniques, in embodiments of the present disclosure, the sacrificial layer is formed and patterned prior to the formation of the dielectric layer, thereby avoiding polishing the amorphous carbon. Therefore, production cycle may be reduced and efficiency may be tremendously improved.

Problems solved by technology

However, these materials are unlikely to react with polishing solutions due to special chemical characteristics thereof.

As a result, the CMP process may have an unacceptable low polishing speed of the sacrificial material.

Besides, the polishing speed of the sacrificial material is much faster than that of the semiconductor dielectric layer, which may, on the one hand, prolong the polishing period, on the other hand, bring a difficulty for stopping the polishing precisely on the surface of the semiconductor dielectric layer.

A loss on the semiconductor dielectric layer's thickness is likely to occur.