Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible OTP sector protection architecture for flash memories

a flash memory and flexible technology, applied in the field of flash memories, can solve the problems of loss of protection, volatile protection, and mechanisms for providing nonvolatile protection against programming

Active Publication Date: 2006-10-31
ATMEL CORP
View PDF10 Cites 41 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a way to protect a memory from being modified. It involves using special cells that can be programmed once and can permanently prevent modification of certain parts of the memory. These special cells are coupled with logic that selects which parts of the memory are protected. This invention allows for the permanent protection of selected parts of the memory from programming.

Problems solved by technology

Although conventional software protection allows the protection of the portion of the memory to be dynamically changed, the protection is volatile.
Consequently, once power to the memory is shut off, the protection is lost.
However, such conventional mechanisms for providing nonvolatile protection against programming still have drawbacks such as the inability to configure the size of the portion of the memory being protected or the inability to choose the address position of the portion of the memory to be protected.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible OTP sector protection architecture for flash memories
  • Flexible OTP sector protection architecture for flash memories
  • Flexible OTP sector protection architecture for flash memories

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014]The present invention relates to memory devices. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.

[0015]The present invention provides a method and system for protecting a memory having a plurality of blocks from being modified. The method and system comprise providing a plurality of one time programmable (OTP) cells and OTP cell logic coupled with the OTP cells. An OTP cell of the plurality of OTP cells corresponds to a portion of a block of the plurality of blocks. The OTP cell allows modification ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and system for protecting a memory having a plurality of blocks from modification is disclosed. The method and system include providing a plurality of one time programmable (OTP) cells and OTP cell logic coupled with the OTP cells. An OTP cell of the plurality of OTP cells corresponds to a portion of a block of the plurality of blocks. The OTP cell allows modification of the portion of the block when the OTP cell is in a first state and permanently prevents modification of the portion of the block when the OTP cell is in a second state. The OTP cell logic uses the plurality of OTP cells to select the portion of the block as corresponding to the OTP cell. This portion of the block is write protected when the OTP cell is placed in the second state.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit under 35 USC 119, of Italian Application no. MI2004A 001967, filed on Oct. 15, 2004.FIELD OF THE INVENTION[0002]The present invention relates to flash memories, and more particularly to a system and method for protecting portions of a memory, such as a flash memory, in a more flexible fashion.BACKGROUND OF THE INVENTION[0003]Memories, such as flash memories, are used for storing a variety of data. Often, it is desirable to protect a portion of the memory from being changed. Typically, the portion of the memory is protected from being modified using conventional software protection or conventional hardware protection. If conventional software protection is used, then protect, unprotect, and lock-down commands are provided. The protect commands allows the portion of the memory to be protected from any modificatrion. The unprotect command allows the portion of the memory to be modified. The lock-down command p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): G11C17/00
CPCG11C16/22G11C2216/26
Inventor REGGIORI, RICCARDO RIVABEDARIDA, LORENZOODDONE, GIORGIOCASER, FABIO TASSAN
Owner ATMEL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products