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Selective laser-assisted transfer of discrete components

a discrete component and laser-assisted technology, applied in the field of electromechanical manufacturing, can solve the problems of insufficient mass for separation from the carrier and transfer, difficult handling, and dice on either end of the size spectrum, and achieve the effects of easy handling, easy shattering, and convenient packaging

Inactive Publication Date: 2014-08-28
NORTH DAKOTA STATE UNIV RES FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method and apparatus for handling ultra-thin articles, such as bare semiconductor dice, with thicknesses of less than 100 μm. The invention uses a laser-assisted transfer method that allows for a gentle transfer of the article without damaging it. The invention can handle articles with sizes ranging from several hundredths of a square mm to several square mm or larger. The invention offers a high-throughput solution for assembling ultra-thin semiconductor components and can achieve significantly higher placement speeds compared to conventional pick-and-place machines. The invention uses a thin layer of laser-induced blistering material to separate the article from the carrier and transfer it to the receiving substrate. The blistering layer is controlled to prevent rupture of the blister during the transfer process. The invention can also utilize a dual layer for added stability during the transfer process. Overall, the invention provides a unique solution for handling ultra-thin articles and allows for their safe and efficient assembly.

Problems solved by technology

It will be noted that complications can arise with handling dice on either end of the size spectrum.
Small size dice, such as several hundredths of a square mm area, may have insufficient mass for separation from the carrier and transfer over the gap in response to momentum and gravitational forces of the process.
When ultra-thin dice are large, such as several square mm or more in area, they can be difficult to handle because of issues with bending and warpage.

Method used

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Examples

Experimental program
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embodiment 1

[0106]2. The method of embodiment 1, wherein said blister expands to a substantially fixed distance in response to receiving said low-energy laser beam.

[0107]3. The method of embodiment 1, wherein said blistering layer comprises a polymer, polyimide, or inorganic material selected for ablation in a controlled, and non-explosive, manner in response to irradiation with a laser beam of a given wavelength and pulse energy and which exhibits sufficient elastic behavior that a blister can be formed without rupturing.

[0108]4. The method of embodiment 1, wherein said blistering layer is subject to ablation that is limited to a non-penetrating ablation creating vapors to form said blister without rupturing said blister.

[0109]5. The method of embodiment 1, wherein said blister is formed in response to said low-energy laser beam evaporating a small amount of material from said blistering layer which generates gases that create a blister in said carrier which deforms said adhesive layer of said...

embodiment 8

[0113]9. The method of embodiment 8, wherein said scanning pattern is selected from a group of scanning patterns consisting of straight lines, curved lines, closed curves, circles, triangles, rectangles, and other geometric shapes.

[0114]10. The method of embodiment 1, wherein said low-energy laser beam comprises less than 1 mJ of energy to assure that said blisters do not burst during transfer of said article.

embodiment 10

[0115]11. The method of embodiment 10, wherein said low-energy laser has on the order of 20 μJ of energy per pulse.

[0116]12. The method of embodiment 1, wherein material vaporized by said low-energy laser beam are confined to an interior of said blister within said blistering layer.

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Abstract

Electronic components are often assembled using robotic equipment, such as pick-and-place machines, that is not optimized for components such as ultra-thin semiconductor bare dice. Selective laser-assisted die transfer is described based on the unique blistering behavior of a multilayer dynamic release layer when irradiated by low energy focused laser pulse(s) in which the blister creates translation of the article being placed. Accurate placement results are provided with negligible lateral and angular displacement.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a 35 U.S.C. §111(a) continuation of PCT international application number PCT / US2012 / 033147 filed on Apr. 11, 2012, incorporated herein by reference in its entirety, which is a nonprovisional of U.S. provisional patent application Ser. No. 61 / 473,988 filed on Apr. 11, 2011, incorporated herein by reference in its entirety. Priority is claimed to each of the foregoing applications.[0002]The above-referenced PCT international application was published as PCT International Publication No. WO 2012 / 142177 on Oct. 18, 2012 and republished on Feb. 28, 2013, which publications are incorporated herein by reference in their entireties.STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT[0003]This invention was made with Government support under Defense Microelectronics Activity (DMEA), Department of Defense Cooperative Agreements Nos. H94003-08-2-0805, H94003-09-2-0905, and H94003-11-2-1102. The Government has certain ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B32B37/00
CPCB32B37/025H01L21/67132H01L21/6835H01L24/83H01L2221/68363H01L2221/68381H01L2224/8385H01L2224/83192H01L2224/83001H01L2924/10253H01L2924/01029H01L2221/68318H01L2221/68322H01L2221/68327H01L2924/1461H01L2924/12042H01L2924/3512H01L2924/00B29C65/1606B29C65/1635H01L21/68H01L21/50B29C65/16
Inventor MARINOV, VAL R.SWENSON, ORVENPAVICIC, MARKMILLER, ROSS A.CHEN, ZHIGANGSARWAR, FERDOUSSEMLER, MATTHEW R.
Owner NORTH DAKOTA STATE UNIV RES FOUND
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