Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconductor device, refresh control method thereof and computer system

a technology of a memory controller and a memory device, applied in the field of memory controller, can solve the problems of increasing consumption current and inability to apply to a general dram, and achieve the effects of reducing consumption current, rapid refresh operation, and improving memory access efficiency

Inactive Publication Date: 2011-09-15
PS4 LUXCO SARL
View PDF10 Cites 70 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The present invention provides a semiconductor device and a method for refreshing memory cells in a more efficient way. The semiconductor device includes a control circuit that controls a refresh operation on a refresh word line based on state information of a register. The control circuit can determine whether or not the word line is in an active state and refresh the memory cells connected to the refresh word line while it is in an inactive state. This allows for a faster and more reliable refresh operation within one refresh cycle. The invention can also be applied to a computer system comprising a multi-core processor and a control block controlling access to the memory cell array via a bus. Overall, the invention improves access efficiency and reduces consumption current, especially in a large capacity DRAM having a multi-core CPU."

Problems solved by technology

However, the control method disclosed in the Patent Reference 1 is applied to a memory operation in which all blocks (corresponding to banks of the DRAM) are always maintained in a page open state, and a problem arises in that it cannot be applied to a general DRAM.
Thus, this requires a complicated control using a plurality of commands, thereby causing a problem of an increase in consumption current.
Furthermore, in the control method disclosed in the Patent Reference 1, it is assumed that a memory controller issues a plurality of commands, and however a problem arises in that a new controller for the DRAM needs to be designed in order to maintain compatibility with the current DRAM that performs an auto-refresh operation by issuing one command.
In addition, the control method disclosed in the Patent Reference 2 has the same problems, and a control method capable of solving a series of these problems has not been proposed yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, refresh control method thereof and computer system
  • Semiconductor device, refresh control method thereof and computer system
  • Semiconductor device, refresh control method thereof and computer system

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0045]FIG. 1 shows a block diagram of an entire configuration of the DRAM of the first embodiment to which the present invention is applied. The DRAM shown in FIG. 1 is implemented on a memory chip C (FIG. 2), and is provided with a memory cell array region 100 divided into a plurality of banks (BANK), a row circuit group 11 and a column circuit group 12 that are attached to each bank. Although there are provided four banks (BANK) in the example of FIG. 1, the number of banks is not restricted. In the memory cell array region 100, a plurality of memory cells MC are formed at intersections of a plurality of word lines WL and a plurality of bit lines BL. The row circuit group 11 includes circuits such as a large number of row decoders (not shown) and the like that are provided corresponding to the plurality of word lines WL. The column circuit group 12 includes circuits such as later-described sense amplifier rows that are provided corresponding to the plurality of bit lines.

[0046]A r...

second embodiment

[0069]In the DRAM of the second embodiment, a relief circuit that replaces a defective word line with a redundancy word line is added to the DRAM of the first embodiment. The configurations and operations of FIGS. 1 to 5 and 8 to 10 in the first embodiment are common in the second embodiment and thus description thereof will be omitted. FIG. 11 is a flow chart showing a flow of the refresh control performed in the DRAM of the second embodiment. In FIG. 11, Step S20 is performed in the same manner as Step S10 in the first embodiment.

[0070]Subsequently, if the open page does not exist in the block BK (Step S20: NO) in accordance with determination result of Step S20, it is determined whether or not the refresh address matches a relief originating address (Step S21). The relief originating address means a row address at which a defective word line has existed and relieved. If the determination result of Step S21 indicates that the refresh address does not match the relief originating a...

third embodiment

[0073]Although the refresh control corresponding to the existence of the open page is performed for each block BK in the DRAM of the first and second embodiments, the DRAM of the third embodiment is modified so that the same refresh control is performed for each memory cell array 10. FIG. 13 shows a first setting example of an array register AR (refer to FIG. 20) in the DRAM of the third embodiment. The array register AR is provided in the control data registers 40 of the array control circuit 32, and stores information required for performing the refresh control of the third embodiment. Specifically, when stored data in the memory cell MC corresponding to the open page is sensed and amplified by a predetermined sense amplifier SA, array address information identifying all memory cell arrays 10 to which word lines WL sharing the predetermined sense amplifier SA belong is stored in the array register AR.

[0074]Four memory cell arrays 10(A), 10(B), 10(C) and 10(D) are shown in the uppe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device comprises a first memory cell array, a register storing information of whether or not one of the word lines in an active state exists in a unit area and storing address information, and a control circuit controlling a refresh operation for a refresh word line based on the information in the register when receiving a refresh request. When the one of the word lines in an active state does not exist, memory cells connected to the refresh word line are refreshed. When the one of the word lines in an active state exists, the one of the word lines in an active state is set into an inactive state temporarily and the memory cells connected to the refresh word line are refreshed after precharging bit lines of the memory cells.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device performing a refresh operation for a memory cell array including a plurality of memory cells, and particularly relates to a semiconductor device performing an auto-refresh operation in a situation where there is an open page in the memory cell array, and a refresh control method thereof.[0003]2. Description of Related Art[0004]In a semiconductor memory device such as a DRAM, a control for improving access efficiency has been introduced, in which a predetermined word line in a memory cell array is activated, data is sensed and amplified through a bit line (so-called “open page”) and this state is maintained. Meanwhile, when using the DRAM, for example, it is required to perform a refresh operation for retaining data of memory cells with a constant period. Conventionally, various control methods have been proposed for performing the refresh operation in the semicondu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/402G06F12/00
CPCG11C11/406G11C11/407G11C11/40618G11C11/40603
Inventor KAJIGAYA, KAZUHIKO
Owner PS4 LUXCO SARL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com