Efficient gallium thin film electroplating methods and chemistries

Abstract

The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of and claims priority to U.S. application Ser. No. 11 / 535,927 filed Sep. 27, 2006 entitled “Efficient Gallium Thin Film Electroplating Methods and Chemistries”, the entirety of which is incorporated herein by reference.FIELD OF THE INVENTION[0002]This invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells.BACKGROUND[0003]Gallium is an element that is used in semiconductor and electronics industries. Gallium is generally recovered as a by-product from Bayer-process liquors containing sodium aluminate (see for example, U.S. Pat. No. 2,793,179 and U.S. Pat. No. 2,582,377). Although electrodeposition is a common method to recover bulk Ga (see for example, U.S. Pat. No. 3,904,497) out of basic or acidic...

AI Technical Summary

Benefits of technology

[0008]The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells.

Problems solved by technology

Although electrodeposition is a common method to recover bulk Ga (see for example, U.S. Pat. No. 3,904,497) out of basic or acidic solutions, or to purify bulk Ga, there have not been many applications for this material where thin films were deposited with controlled uniformity, morphology and thickness.

There are, however, some common problems associated with the prior-art electrochemical deposition processes.

These problems include, low cathodic deposition efficiency due to excessive hydrogen generation, poor repeatability of the process, partly due to the poor cathodic efficiency, and the poor quality of the deposited films such as their high surface roughness and poor morphology.

Poor film morphology or inadequate thickness control may also not be important for the electrically inactive applications of Ga layers, such as their use as lubricating coatings etc.

Prior-art Ga electroplating techniques utilizing simple electrolytes operating under acidic or basic pH values are not suitable for the above mentioned electronics applications for a variety of reasons, including that they result in poor plating efficiencies and films with rough morphology (typically surface roughness larger than about 20% of the film thickness).

Gallium is a difficult metal to deposit without excessive hydrogen generation on the cathode because Ga plating potential is high.

Hydrogen generation and evolution also causes poor morphology and micro defects on the depositing films due to the tiny hydrogen bubbles sticking to the surface of the depositing film, masking the micro-area under them, and therefore impeding deposit on that micro-area.

This causes micro-regions with less than optimum amount of Ga in the film stack.

Poor plating efficiencies inherently reduce the repeatability of an electrodeposition process because hydrogen generation phenomenon itself is a strong function of many factors including impurities in the electrolyte, deposition current densities, small changes on the morphology or chemistry of the substrate surface, temperature, mass transfer etc.

Electrodeposition of Ga out of low pH aqueous electrolytes or solutions may suffer from low cathodic efficiencies arising from the presence of a large concentration of H+ species in such electrolytes.

High concentrations of alkaline species, however, cause corrosion problems for the equipment as well as the cathode material itself.

As pointed out above, solutions comprising a large molar amount of caustics are difficult to handle and they also have high viscosity.

High viscosity makes the hydrogen bubbles formed on the cathode stick more to the cathode making it very difficult to remove them by stirring or other means of mass transfer.