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Electrically Conductive Material

a technology of electrical conductivity and material, applied in the field of electrical conductivity materials, can solve the problems of insufficient improvement and increase of resistivity of semiconductor devices

Inactive Publication Date: 2009-02-05
CHU JINN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0007]Therefore, the object of the present invention is to provide an electrically conductive material that can overcome the aforesaid drawback associated with the prior art.

Problems solved by technology

However, due to the lack of stability in mechanical properties under high processing temperatures in semiconductor processes, copper or copper alloy can incur problems, such as adhesion, current leakage, and thermal diffusion of copper into a Si substrate to react with silicon to form a copper-silicon compound, which results in an increase in resistivity of the semiconductor device.
However, such improvement is still insufficient, and the annealing temperature can reach only a temperature ranging from 400° C. to 530° C. for the conventional polycrystalline copper alloys.

Method used

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Examples

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example 1 (

E1)

[0035]A Si substrate was placed inside a magnetron sputtering system. A feed gas including argon plasma was introduced into the sputtering system under a working pressure of 1×10−2 torr. After applying an output power of 150 W on a Cu—Ru target, a Cu100-xRux film, x=0.6, was formed on the Si substrate and had a thickness of approximately 300 nm. The sputtering operation was conducted at a sputtering rate of 4.8 nm / min. The temperature of the Si substrate was approximately 80° C. during the deposition of the Cu100-xRux film. Subsequently, specimens of the Cu100-xRux film thus formed were subjected to annealing treatment so as to eliminate residual stress therein and so as to enable Ru to precipitate from copper lattice sites and into copper grain boundaries. The annealing temperatures for the corresponding specimens were 200° C., 400° C., 580° C. and 600° C., respectively (see FIG. 1). A Pt film was then formed on each specimen of the Cu100-xRux film for microscope measurement.

example 2 (

E2)

[0036]The polycrystalline copper alloy of Example 2 was prepared using steps similar to those of Example 1, except that the feed gas included argon and nitrogen plasma. The polycrystalline copper alloy thus formed was Cu100-x-yRuxNy, wherein x=0.4, and y=1.7. Subsequently, specimens of the Cu100-x-yRuxNy film thus formed were subjected to annealing treatment. The annealing temperatures for the corresponding specimens were 200° C., 400° C., 680° C. and 700° C. respectively (see FIG. 1).

example 3 (

E3)

[0037]The polycrystalline copper alloy of Example 3 was prepared using steps similar to those of Example 1, except that the target employed in the sputtering system was Cu—Re. The polycrystalline copper alloy thus formed was Cu100-xRex, wherein x=0.9. Subsequently, specimens of the Cu100-xRex film thus formed were subjected to annealing treatment. The annealing temperatures for the corresponding specimens were 200° C., 400° C., 560° C. and 580° C., respectively (see FIG. 1).

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Abstract

An electrically conductive material includes: a supersaturated solid solution of a polycrystalline copper alloy having a composition represented by the formula: Cu100-x-yMxNy; wherein x and y are atomic ratios; wherein 0<x≦2.0 and 0≦y≦2.0; wherein M is selected from Ru, Re, Ho, and combinations thereof; and wherein the supersaturated solid solution includes M precipitates formed at grain boundaries of the polycrystalline copper alloy when y is equal to zero, and includes M precipitates and MN particles formed at the grain boundaries of the polycrystalline copper alloy when y is not zero.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority of Taiwanese application no. 096128658, filed on Aug. 3, 2007.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This invention relates to an electrically conductive material, more particularly to an electrically conductive material capable of being annealed under a relatively high temperature.[0004]2. Description of the Related Art[0005]Copper has replaced aluminum as an interconnecting material in a semiconductor device due to its excellent properties, such as electric conductivity, electromigration resistance, etc. However, due to the lack of stability in mechanical properties under high processing temperatures in semiconductor processes, copper or copper alloy can incur problems, such as adhesion, current leakage, and thermal diffusion of copper into a Si substrate to react with silicon to form a copper-silicon compound, which results in an increase in resistivity of the semiconductor devic...

Claims

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Application Information

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IPC IPC(8): C22C9/00
CPCC22C9/00
Inventor CHU, JINNLIN, CHON-HSIN
Owner CHU JINN
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